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    Text: Data Sheet 2SK3000 R07DS1134EJ0400 Rev.4.00 Jan 10, 2014 Silicon N Channel MOS FET Low Frequency Power Switching Features • Low on-resistance RDS on = 0.16 Ω typ. (VGS = 10 V, ID = 450 mA) • 4 V gate drive devices. • Small package (MPAK) • Expansive drain to source surge power capability


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    PDF 2SK3000 R07DS1134EJ0400