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    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK2075DPA 200V - 20A - MOS FET High Speed Power Switching R07DS0856EJ0100 Rev.1.00 Jul 24, 2012 Features • Low on-resistance RDS on = 0.054  typ. (at ID = 10 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching


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    PDF RJK2075DPA R07DS0856EJ0100 PWSN0008DE-A

    D 417

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK2075DPA 200V - 20A - MOS FET High Speed Power Switching R07DS0856EJ0100 Rev.1.00 Jul 24, 2012 Features • Low on-resistance RDS on = 0.054  typ. (at ID = 10 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching


    Original
    PDF RJK2075DPA R07DS0856EJ0100 PWSN0008DE-A D 417