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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03L3DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0780EJ0110 Power Switching Rev.1.10 May 30, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		RJK03L3DNS R07DS0780EJ0110 PWSN0008JB-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03L3DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0780EJ0110 Power Switching Rev.1.10 May 30, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		RJK03L3DNS R07DS0780EJ0110 PWSN0008JB-A PDF