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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03M6DPA Silicon N Channel Power MOS FET Power Switching R07DS0772EJ0111 Rev.1.11 May 29, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 7.8 m typ. (at VGS = 10 V)


    Original     		PDF RJK03M6DPA R07DS0772EJ0111 PWSN0008DC-B

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03M6DPA Silicon N Channel Power MOS FET Power Switching R07DS0772EJ0111 Rev.1.11 May 29, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 7.8 m typ. (at VGS = 10 V)


    Original     		PDF RJK03M6DPA R07DS0772EJ0111 PWSN0008DC-B