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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03M6DNS Silicon N Channel Power MOS FET Power Switching R07DS0771EJ0110 Rev.1.10 May 29, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 7.6 m typ. (at VGS = 10 V)


    Original     		PDF RJK03M6DNS R07DS0771EJ0110 PWSN0008JB-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03M6DNS Silicon N Channel Power MOS FET Power Switching R07DS0771EJ0110 Rev.1.10 May 29, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 7.6 m typ. (at VGS = 10 V)


    Original     		PDF RJK03M6DNS R07DS0771EJ0110 PWSN0008JB-A