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    Text: Preliminary Datasheet RJH60F5BDPQ-A0 600V - 40A - IGBT High Speed Power Switching R07DS0631EJ0100 Rev.1.00 Feb 17, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		PDF RJH60F5BDPQ-A0 R07DS0631EJ0100 PRSS0003ZH-A O-247A)

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    Abstract: RJH60F5BDPQ RJH60F5BDPQ-A0
    Text: Preliminary Datasheet RJH60F5BDPQ-A0 600V - 40A - IGBT High Speed Power Switching R07DS0631EJ0100 Rev.1.00 Feb 17, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		PDF RJH60F5BDPQ-A0 R07DS0631EJ0100 PRSS0003ZH-A O-247A) rjh60f5 RJH60F5BDPQ RJH60F5BDPQ-A0