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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6012DPP-E0 600V - 10A - MOS FET High Speed Power Switching R07DS0611EJ0100 Rev.1.00 Mar 16, 2012 Features • Low on-resistance RDS on = 0.77  typ. (at ID = 5 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching


    Original     		PDF RJK6012DPP-E0 R07DS0611EJ0100 PRSS0003AG-A O-220FP)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6012DPP-E0 600V - 10A - MOS FET High Speed Power Switching R07DS0611EJ0100 Rev.1.00 Mar 16, 2012 Features • Low on-resistance RDS on = 0.77  typ. (at ID = 5 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching


    Original     		PDF RJK6012DPP-E0 R07DS0611EJ0100 PRSS0003AG-A O-220FP)