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    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP28N10SDE R07DS0507EJ0100 Rev.1.00 Sep 16, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP28N10SDE is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS on 1 = 52 mΩ MAX. (VGS = 10 V, ID = 14 A)


    Original     		NP28N10SDE R07DS0507EJ0100 NP28N10SDE AEC-Q101 NP28N10SDE-E1-AY NP28N10SDE-E2-AY O-252 PDF

    NP28N10SDE

    Abstract: NP28N10
    Text: Preliminary Data Sheet NP28N10SDE R07DS0507EJ0100 Rev.1.00 Sep 16, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP28N10SDE is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS on 1 = 52 mΩ MAX. (VGS = 10 V, ID = 14 A)


    Original     		NP28N10SDE R07DS0507EJ0100 NP28N10SDE AEC-Q101 NP28N10SDE-E1-AY NP28N10SDE-E2-AY O-252 NP28N10 PDF