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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet 2SJ496 R07DS0433EJ0400 Previous: REJ03G0870-0300 Rev.4.00 Jun 07, 2011 Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. (at VGS = –10 V, ID = –2.5 A) • 4 V gate drive devices.


    Original     		PDF 2SJ496 R07DS0433EJ0400 REJ03G0870-0300) PRSS0003DC-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet 2SJ496 R07DS0433EJ0400 Previous: REJ03G0870-0300 Rev.4.00 Jun 07, 2011 Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. (at VGS = –10 V, ID = –2.5 A) • 4 V gate drive devices.


    Original     		PDF 2SJ496 R07DS0433EJ0400 REJ03G0870-0300) PRSS0003DC-A