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    RJK2017

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK2017DPP R07DS0416EJ0300 Previous: REJ03G1797-0200 Rev.3.00 Jun 07, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.036 Ω typ. (at ID = 22.5 A, VGS = 10 V, Ta = 25°C) • Low leakage current


    Original     		PDF RJK2017DPP R07DS0416EJ0300 REJ03G1797-0200) PRSS0003AB-A O-220FN) RJK2017

    RJK2017

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK2017DPP R07DS0416EJ0300 Previous: REJ03G1797-0200 Rev.3.00 Jun 07, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.036 Ω typ. (at ID = 22.5 A, VGS = 10 V, Ta = 25°C) • Low leakage current


    Original     		PDF RJK2017DPP R07DS0416EJ0300 REJ03G1797-0200) PRSS0003AB-A O-220FN) RJK2017