Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJH60F0DPQ-A0 600 V - 25 A - IGBT High Speed Power Switching R07DS0324EJ0200 Rev.2.00 Jul 22, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package
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Original
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RJH60F0DPQ-A0
R07DS0324EJ0200
PRSS0003ZH-A
O-247A)
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PDF
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PRSS0003ZH-A
Abstract: No abstract text available
Text: Preliminary Datasheet RJH60F0DPQ-A0 600 V - 25 A - IGBT High Speed Power Switching R07DS0324EJ0200 Rev.2.00 Jul 22, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package
|
Original
|
RJH60F0DPQ-A0
R07DS0324EJ0200
PRSS0003ZH-A
O-247A)
PRSS0003ZH-A
|
PDF
|