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    Abstract: No abstract text available
    Text: Preliminary Datasheet RQK0203SGDQA R07DS0303EJ0400 Previous: REJ03G1323-0300 Rev.4.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 68 m typ (VGS = 4.5 V, ID = 1.5 A)  Low drive current  High speed switching


    Original
    PDF RQK0203SGDQA R07DS0303EJ0400 REJ03G1323-0300) PLSP0003ZB-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RQK0203SGDQA R07DS0303EJ0400 Previous: REJ03G1323-0300 Rev.4.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 68 m typ (VGS = 4.5 V, ID = 1.5 A)  Low drive current  High speed switching


    Original
    PDF RQK0203SGDQA R07DS0303EJ0400 REJ03G1323-0300) PLSP0003ZB-A