Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RQK0203SGDQA R07DS0303EJ0400 Previous: REJ03G1323-0300 Rev.4.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 68 m typ (VGS = 4.5 V, ID = 1.5 A) Low drive current High speed switching
|
Original
|
PDF
|
RQK0203SGDQA
R07DS0303EJ0400
REJ03G1323-0300)
PLSP0003ZB-A
|
Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RQK0203SGDQA R07DS0303EJ0400 Previous: REJ03G1323-0300 Rev.4.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 68 m typ (VGS = 4.5 V, ID = 1.5 A) Low drive current High speed switching
|
Original
|
PDF
|
RQK0203SGDQA
R07DS0303EJ0400
REJ03G1323-0300)
PLSP0003ZB-A
|