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    Text: Preliminary Datasheet RQJ0303PGDQA R07DS0295EJ0600 Rev.6.00 Jan 10, 2014 Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS on = 54 mΩ typ (VGS = –10 V, ID = –1.6 A) • Low drive current • High speed switching • 4.5 V gate drive


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    PDF RQJ0303PGDQA R07DS0295EJ0600 PLSP0003ZB-A