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    BB506C

    Abstract: No abstract text available
    Text: Preliminary Datasheet BB506C R07DS0288EJ0300 Rev.3.00 Jan 10, 2014 Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain PG = 24 dB typ. f = 900 MHz • Low noise


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    PDF BB506C R07DS0288EJ0300 OT-343mod) PTSP0004ZA-A BB506C