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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet BB504M R07DS0286EJ0800 Previous: REJ03G0837-0700 Rev.8.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF = 1.75 dB typ. at f =900 MHz


    Original     		BB504M R07DS0286EJ0800 REJ03G0837-0700) OT-143Rmod) PLSP0004ZA-A BB504M PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet BB504M R07DS0286EJ0800 Previous: REJ03G0837-0700 Rev.8.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF = 1.75 dB typ. at f =900 MHz


    Original     		BB504M R07DS0286EJ0800 REJ03G0837-0700) OT-143Rmod) PLSP0004ZA-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet BB504M R07DS0286EJ0800 Previous: REJ03G0837-0700 Rev.8.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF = 1.75 dB typ. at f =900 MHz


    Original     		BB504M R07DS0286EJ0800 REJ03G0837-0700) OT-143Rmod) PLSP0004ZA-A PDF