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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet BB504C R07DS0285EJ0700 Previous: REJ03G0836-0600 Rev.7.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF =1.75 dB typ. at f =900 MHz


    Original     		PDF BB504C R07DS0285EJ0700 REJ03G0836-0600) OT-343mod) PTSP0004ZA-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet BB504C R07DS0285EJ0700 Previous: REJ03G0836-0600 Rev.7.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF =1.75 dB typ. at f =900 MHz


    Original     		PDF BB504C R07DS0285EJ0700 REJ03G0836-0600) OT-343mod) PTSP0004ZA-A BB504C