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    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0212DPA Silicon N Channel Power MOS FET Power Switching R07DS0219EJ0200 Rev.2.00 Dec 07, 2010 Features •     Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance


    Original     		PDF RJK0212DPA R07DS0219EJ0200 PWSN0008DC-B Cha9044

    RJK0212DPA-00-J5A

    Abstract: RJK0212dpa
    Text: Preliminary Datasheet RJK0212DPA Silicon N Channel Power MOS FET Power Switching R07DS0219EJ0200 Rev.2.00 Dec 07, 2010 Features •     Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance


    Original     		PDF RJK0212DPA R07DS0219EJ0200 PWSN0008DC-B Channel9044 RJK0212DPA-00-J5A RJK0212dpa