Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet NP90N03VLG R07DS0129EJ0100 Rev.1.00 Sep 24, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP90N03VLG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on 1 = 3.2 mΩ MAX. (VGS = 10 V, ID = 45 A)
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Original
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PDF
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NP90N03VLG
R07DS0129EJ0100
NP90N03VLG
AEC-Q101
NP90N03VLG-E1-AYâ
NP90N03VLG-E2-AYâ
O-252,
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NP90N03VLG
Abstract: No abstract text available
Text: Preliminary Data Sheet NP90N03VLG R07DS0129EJ0100 Rev.1.00 Sep 24, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP90N03VLG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on 1 = 3.2 mΩ MAX. (VGS = 10 V, ID = 45 A)
|
Original
|
PDF
|
NP90N03VLG
R07DS0129EJ0100
NP90N03VLG
AEC-Q101
NP90N03VLG-E1-AY1
NP90N03VLG-E2-AY1
O-252,
|