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    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES • Suitable for short and medium pulse application up to 100 us pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness


    OCR Scan     		PDF R02731B10W 0CH3CI54

    K 3053 TRANSISTOR

    Abstract: k 246 transistor
    Text: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES • Suitable for short and medium pulse application up to 100 p,s pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness


    OCR Scan     		PDF R02731B10W 0CH3C54 K 3053 TRANSISTOR k 246 transistor