A0-A19
Abstract: No abstract text available
Text: SL29081-90 T/G (V/R/S) Preliminary† 2M X 32 Bits (8MB) Flash Memory Module (5V Only) FEATURES GENERAL DESCRIPTION • • • • • • The SiliconTech SL29081-15(T/G)(V/R/S) is a 2M x 32 bits flash 80-pin Single In-line Memory Module (SIMM). This module
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SL29081-90
SL29081-15
80-pin
40-pin
A0-A19
DQ8-DQ15
DQ16-DQ23
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Am29F080
Abstract: No abstract text available
Text: SL29081-15 T/G (V/R/S) Preliminary† 2M X 32 Bits (8MB) Flash Memory Module (5.0V Only) FEATURES GENERAL DESCRIPTION • • • • • • The SiliconTech SL29081-15(T/G)(V/R/S) is a 2M x 32 bits flash 80-pin Single In-line Memory Module (SIMM). This module
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SL29081-15
80-pin
40-pin
150ns
A0-A19
DQ8-DQ15
DQ24-DQ31
Am29F080
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AMD 2m flash memory
Abstract: No abstract text available
Text: SL29082-90 T/G (V/R/S) Preliminary† 2M X 32 Bits (8MB) Flash Memory Module (5.0V Only) FEATURES GENERAL DESCRIPTION • • • • • • The SiliconTech SL29082-90(T/G)(V/R/S) is a 2M x 32 bits flash 80-pin Single In-line Memory Module (SIMM). This module
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SL29082-90
80-pin
48-pin
A0-A20
DQ8-DQ15
DQ16-DQ23
AMD 2m flash memory
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AMD 2m flash memory
Abstract: edge connector 22 pin
Text: SL29082-90 T/G 4(V/R/S) Preliminary† 2M X 32 Bits (8MB) Flash Memory Module (3,3V Only) FEATURES GENERAL DESCRIPTION • • • • • • The SiliconTech SL29082-90(T/G)4(V/R/S) is a 2M x 32 bits flash 80-pin Single In-line Memory Module (SIMM). This module
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SL29082-90
80-pin
40-pin
A0-A20
DQ8-DQ15
DQ16-DQ23
DQ24-DQ31
AMD 2m flash memory
edge connector 22 pin
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LH28F016SUT-70
Abstract: 28F008SA 28F016SV
Text: Preliminary SL29081-70 T/G A5(V/R/S) 2M X 32 Bits (8MB) Flash Memory Module (5V Only) FEATURES GENERAL DESCRIPTION • • • • The SiliconTech SL29081-70(T/G)A5(V/R/S) is a 2M x 32 bits flash memory module. The SL29081-70(T/G)A5(V/R/S) consists of four 1M x 16 bits CMOS flash memory in 56-pin TSOP-I
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SL29081-70
56-pin
80-pin
DQ16-DQ31
A1-A20
DQ0-DQ15
0295M
LH28F016SUT-70
28F008SA
28F016SV
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s2mX
Abstract: No abstract text available
Text: SL29081-15 T/G 4(V/R/S) 2M X 32 Bits (8MB) Flash Memory Module (3.3V Only) FEATURES GENERAL DESCRIPTION • • • • • • The SiliconTech SL29081-15(T/G)4(V/R/S) is a 2M x 32 bits flash 80-pin Single In-line Memory Module (SIMM). This module consists of eight 1M x 8 bits CMOS flash memory in 40-pin
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SL29081-15
80-pin
40-pin
150ns
A0-A19
DQ8-DQ15
DQ24-DQ31
s2mX
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Untitled
Abstract: No abstract text available
Text: CS223-2M CS223-2N w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON CONTROLLED RECTIFIERS 2 AMPS, 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CS223-2M and CS223-2N are epoxy molded SCRs designed for sensing circuit applications and control systems.
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CS223-2M
CS223-2N
CS223-2M
CS223-2N
OT-223
21-January
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12v, 40a scr
Abstract: CS223-2N CS223-2M
Text: CS223-2M CS223-2N SURFACE MOUNT 2 AMP SILICON SCR 600 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CS223-2M series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control
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CS223-2M
CS223-2N
CS223-2M
OT-223
Temperature62
12-February
12v, 40a scr
CS223-2N
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LT 5265
Abstract: PAL16R8A PAL16L8A PAL16R4A-2
Text: PALI 6L8AM, PAL16L8A-2M, PAL16R4AM, PAL16R4A-2M PAL16R6AM, PAL16R6A-2M, PAL16R8AM, PAL16R8A-2M STANDARD HIGH-SPEED PAL CIRCUITS D 2 7 0 5 . F E B R U A R Y 1 9 8 4 - R E V IS E D A U G U S T 1 9 8 9 Choice of Operating Speeds High Speed, A Devices . . . 25 MHz
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PAL16L8A-2M,
PAL16R4AM,
PAL16R4A-2M
PAL16R6AM,
PAL16R6A-2M,
PAL16R8AM,
PAL16R8A-2M
L16LS
PAL16R4
PAL16R6
LT 5265
PAL16R8A
PAL16L8A
PAL16R4A-2
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C6V2 ST
Abstract: ST c6v8 c5v6 st C5V1 ST zener c15 ST C4V3 ST C9V1 ST C4V7 ST c5v1 C5V6
Text: BZV49 SERIES ELECTRICAL CHARACTERISTICS at Tamb= 25°C . Zener Voltage Vz at lz=2m A Type VOLTS BZV49: Nom . Tem perature Coefficient Sz at lz=2m A m V/°C Differential Resistance rz at lz=2m A a Reverse Current lRat V R HA V Min. Max. M ax. Min Max Max Max
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BZV49
BZV49:
C6V2 ST
ST c6v8
c5v6 st
C5V1 ST
zener c15 ST
C4V3 ST
C9V1 ST
C4V7 ST
c5v1
C5V6
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A1967
Abstract: No abstract text available
Text: 80-PIN FLASH SIMMS STI29082-90 T/G (R/S) 2M X 32 Bits Flash Memory Module (5V Only) FEATURES GENERAL DESCRIPTION • • • • • • The Simple Technology STI29082-90(T/G)(R/S) is a 2M x 32 bits flash memory module. The Simple Technology STI2908290(T/G)(R/S) consists of four 2M x 8 bits CMOS flash memory
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STI29082-90
80-PIN
Am29F016-90
STI2908290
A1967
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PAL16R8A
Abstract: No abstract text available
Text: 0 ^ 1 7 2 5 G O T b lS T 4 • P A L16 L8 A M , P A LI 6L8A-2M, P A L16 R 4 A M , PAL16R4A-2M P A L1S R 6 A M , PAL16R6 A-2M , P A L16 R 8 A M , PAL16R8A-2M STAN DARD HIGH-SPEED PAL CIRCUITS D2705, FEBRUARY 1984-REVISED AUGUST 1989 J OR W PACKAG E C h o ic e of O peratin g S p e e d s
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PAL16R4A-2M
PAL16R6
PAL16R8A-2M
D2705,
1984-REVISED
PAL16R8A
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Untitled
Abstract: No abstract text available
Text: KM29N16000ET/R FLASH MEMORY 2M X 8 Bit NAND Flash Memory Extended Temperature Product FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply The K M 29N 16000E T/R is a 2M (2,09 7 ,1 5 2 )x8 b it N AND • W ide Tem perature O peration : -25'C - +85'C
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KM29N16000ET/R
16000E
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D0241_S4
Abstract: No abstract text available
Text: KM29N16000ET/R FLASH MEMORY 2M x 8 Bit NAND Flash Memory Extended Temperature Product FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Wide Temperature Operation : -25'C - +85'C • Organization - Memory Cell Array : (2M +64K) x 8 bit - Data Register
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KM29N16000ET/R
00241b3
D0241_S4
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D240C
Abstract: No abstract text available
Text: KM29N16000T/R FLASH MEMORY 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Celi Array : 2M +64K x 8 bit - Data Register : (256 + 8) x 8 bit • Automatic Program and Erase - Page Program : (256 + 8)Byte
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KM29N16000T/R
D240C
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km29n16000at
Abstract: c60h - dc
Text: PRELIMINARY KM29N16000AT/R FLASH MEMORY 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization The KM29N16000AT/R is a 2M 2,097,152 x8 bit NAND Flash memory with a spare 64K(65,536)x8 bit. Its NAND cell provides the most cost-effective solution for the mass
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KM29N16000AT/R
250us
ib4142
km29n16000at
c60h - dc
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Untitled
Abstract: No abstract text available
Text: STI642000AD2 168-PIN DIMMS 2M X 64 DRAM DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: *RAC ^CAC *RC STI642000AD2-60 60ns 20ns 110ns STI642000AD2-70 70ns 25ns 130ns The Simple Technology STI642000AD2 is a 2M bi‘ x 64 Dynamic R A M high density memory module. The Simp e Technology
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STI642000AD2
168-PIN
STI642000AD2
44-pin
STI642000AD2-60
STI642000AD2-70
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rdram clock generator
Abstract: Direct RDRAM clock generator
Text: ü 16-M egabit RD R A M 2M x 9 Description System Benefits The 16-M egabit Rambus DRAM (RDRAM™) is an extrem ely-high-speed CMOS DRAM organized as 2M w o rd s by 8 or 9 bits an d capable of b u rstin g u p to 256
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ED-7424)
rdram clock generator
Direct RDRAM clock generator
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Untitled
Abstract: No abstract text available
Text: STI322000AD1 -xxSVG 72-PIN DIMMS 2M X 32 DRAM DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: *R A C Wc *R C STI. •-60SVG 60ns 20ns 1 10ns STI. ■-70SVG 70ns 20ns 130ns STL •-80SVG 80ns 20ns 150ns Fast Page Mode operation The Simple Technology STI322000AD1 is a 2M bits x 32
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STI322000AD1
72-PIN
-60SVG
-70SVG
-80SVG
130ns
150ns
44-pin
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STI29081
Abstract: No abstract text available
Text: 80-PIN FLASH SIMMS STI29081 -90 T/G (R/S) 2M X 32 Bits Flash Memory Module (5V Only) FEATURES GENERAL DESCRIPTION • Access Time of 90ns • TTL compatible inputs and outputs The Simple Technology STI29081-90(T/G)(R/S) is a 2M x 32 bits flash memory module. The Simple Technology STI2908190(T/G)(R/S) consists of eight 1M x 8 bits CMOS flash memory
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STI29081
80-PIN
STI29081-90
STI2908190
40-pin
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Y7T77
Abstract: No abstract text available
Text: M OSEL VTTEUC P R E L IM IN A R Y V404J232 and V404J236 2M x 32 and 2M x 36 CMOS MEMORY MODULES Features Description • 2,097,152 x 32/36 bit organization ■ Utilizes 1M x 4 C M O S DRAMs ■ Fast access times: 70 ns, 80 ns ■ Fast Page mode operation ■ Low power dissipation
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V404J232
V404J236
72-lead
72lead
V404J232/236
Y7T77
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29F016-90
Abstract: No abstract text available
Text: WPF4M32XA-90PSC5 2x2Mx32 5V FLASH SIMM p r e l im in a r y * FEATURES • ■ 100,000 Erase/Program Cycles A cce ss Time of 90ns Packaging: Organized as two banks of 2M x32 • 80-pin SIM M Com m ercial Temperature Range • The module is m anufactured w ith eight 2M x8 CM O S Flash
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WPF4M32XA-90PSC5
2x2Mx32
80-pin
Am29F016
29F016-90
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Untitled
Abstract: No abstract text available
Text: IBM13T2649JC 2M x 64 1 Bank S D R A M SO DIMM Features 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module 2M x64 Synchronous DRAM SO DIMM Performance: 10 CAS Latency ; 12 Units 3 3 fcK Clock Frequency tcK Clock Cycle 100 : 83
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IBM13T2649JC
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Untitled
Abstract: No abstract text available
Text: H igh Perform ance 2M x8 CMOS DRAM II ; AS4C2M8E0 AS4T.C2M8E0 II 2M X 8 CMOS EDO DRAM Prelim inary inform ation Features • O r g a n iz a tio n : 2 ,0 9 7 ,1 5 2 w o r d s x 8 b its • R e a d - m o d ify -w r ite • H ig h s p e e d • T T L -c o m p a tib le , th r e e - s ta te 1 / O
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AS4LC2M8E0-60JC
AS4-C2M8E0-60JC
AS4LC2M8E0-70
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