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    R 2A, TRANSISTOR Search Results

    R 2A, TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
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    R 2A, TRANSISTOR Price and Stock

    Eaton Bussmann TR/3216FF2-R

    Fuse - Chip - Fast Acting - 2A - 32V - SMD - Solder Pad - 1206
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com TR/3216FF2-R 46,470
    • 1 -
    • 10 -
    • 100 $0.55
    • 1000 $0.499
    • 10000 $0.474
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    OptiFuse FCM-R-2A

    Fuse, SMD 2410, Fast-Acting, 125V, 2A | OptiFuse FCM-R-2A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com FCM-R-2A
    • 1 -
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    • 1000 $0.2318
    • 10000 $0.2064
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    OptiFuse TPK-R-2A

    Fuse, UL Class CC, Time Delay, 300VDC/600VAC, 2A | OptiFuse TPK-R-2A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com TPK-R-2A
    • 1 -
    • 10 $14.79
    • 100 $10.79
    • 1000 $6.76
    • 10000 $6.76
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    OptiFuse FPK-R-2A

    Fuse, UL Class CC, Fast-Acting, 300VDC/600VAC, 2A | OptiFuse FPK-R-2A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com FPK-R-2A
    • 1 -
    • 10 $13.17
    • 100 $9.75
    • 1000 $6.1
    • 10000 $6.1
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    OptiFuse TMS-R-2A

    Fuse, UL, Thru-Hole, Slow-Blow, 250V, 2A | OptiFuse TMS-R-2A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com TMS-R-2A
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    • 100 $0.4923
    • 1000 $0.3821
    • 10000 $0.3402
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    Find more R 2A, TRANSISTOR price and stock on Findchips.com

    R 2A, TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    l78s12cv

    Abstract: L78S05CV L785XX L78S L78S15CV L78S12CT L78s09cv L78S18CT
    Text: r z 7 S G S TH O M SO N R iiœ m Œ O T O K S L78S00 S E R IE S 2A POSITIVE VOLTAGE REGULATORS • OUTPUT CURRENT TO 2A ■ OUTPUT VOLTAGES OF 5 ; 7.5 ; 9 ; 10 ; 12 ; 15 ; 18; 24V ■ THERMAL OVERLOAD PROTECTION ■ SHORT CIRCUIT PROTECTION ■ OUTPUT TRANSISTOR SOA PROTECTION


    OCR Scan     		L78S00 T0-220 l78s12cv L78S05CV L785XX L78S L78S15CV L78S12CT L78s09cv L78S18CT PDF

    2DB1188P

    Abstract: P23Q
    Text: 2DB1188P/Q/R 32V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -32V  Case: SOT89   IC = -2A high Continuous Current Low saturation voltage VCE sat < 800mV @ 2A  Case material: Molded Plastic, "Green" Molding Compound.


    Original     		2DB1188P/Q/R 800mV 2DD1766 AEC-Q101 J-STD-020 MIL-STD-202, DS31144 2DB1188P P23Q PDF

    Untitled

    Abstract: No abstract text available
    Text: H A R R IS X RFW2N06RLE Semiconductor 2A, 60V, 0.160 Ohm, Logic Level, N-Channel Power MOSFET juiy 1998 Description Features 2A, 60V The RFW 2N06RLE N-Channel, logic level, ESD protected, power MOSFET is manufactured using the MegaFET process. This process, which


    OCR Scan     		RFW2N06RLE 2N06RLE AN7254 AN7260. PDF

    Logic Level N-Channel Power MOSFET

    Abstract: No abstract text available
    Text: i n t e RFW2N06RLE r r i i D a ta S h e e t J u ly 1999 2A, 60V, 0.160 Ohm, Logic Level, N-Channel Power MOSFET F ile N u m b e r 2838.3 Features • 2A.60V The RFW2N06RLE N-Channel, logic level, ESD protected, power MOSFET is manufactured using the MegaFET


    OCR Scan     		RFW2N06RLE RFW2N06RLE Logic Level N-Channel Power MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: H a r r is I J U S E M I C O N D U C T O R FRL430D, FRL430R, FRL430H 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 2A, 500V, RDS on = 2.5012 TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		FRL430D, FRL430R, FRL430H O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD FRU30UI5 FRL430PHDT0 PDF

    2SD1761

    Abstract: 2SB1187 TRANSISTOR NPN, p2a 2SD1781 2Sd178 2SB1187 transistor le2a
    Text: h -7 > i> 9 /Transistors 2SD1761 2SD1761 Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor • «4ft 1 VcEt-.l-OSVfTyp.) if U '. J; ^ • / D im e n s io n s U n it : m m ) (at le /ÌB = 2A /0 2A) 21 3) P c = 3 0 W t * i ' . ' r r c - 2 S X : ) ,


    OCR Scan     		2SD1761 Tc-25X 2SB1187 09/Dimensions -55-ISO lc/le-2A/02A /1C-3V/05A 2SD1781 2SD1761 2SB1187 TRANSISTOR NPN, p2a 2SD1781 2Sd178 2SB1187 transistor le2a PDF

    Untitled

    Abstract: No abstract text available
    Text: tyvvys S RFP2N08L, RFP2N10L S e m ico n d ucto r 7 2A, 80V and 100V, 1.05 Ohm, Logic Level, N-Channel Power MOSFETs juiy 1998 Features Description • 2A, 80V and 100V The RFP2N08L and RFP2N10L are N-Channel enhancement mode silicon gate power field effect transistors


    OCR Scan     		RFP2N08L, RFP2N10L RFP2N08L AN7254and AN7260. PDF

    kt183

    Abstract: No abstract text available
    Text: r= 7 S C S -T H O M S O N * 7 # » R fflD ^ Q [ iL i© ci r ( Q ) i O ( g i L4972A L4972AD 2A SWITCHING REGULATOR . 2A OUTPUT CURRENT . 5.1 V TO 40V OUTPUT VOLTAGE RANGE •0 TO 90% DUTY CYCLE RANGE i INTERNAL FEED-FORWARD LINE REG. i INTERNAL CURRENT LIMITING


    OCR Scan     		L4972A L4972AD 200KHz L4970A. 330pF 3300UF 330pF 50KHz kt183 PDF

    ZTX750

    Abstract: ZTX650 100-C ZTX751 ZTX752 ZTX753 ferranti c6011 ZTX753 PNP Silicon Planar Medium Power Transistors FEATURES SE74
    Text: * FERRANTI semiconductors ZTX750 ZTX751 ZTX752 ZTX753 PNP Silicon Planar M e d i u m P o w e r Transistors FEATURES • 1.5W Pow er dissipation a t Tamb = 25*C t • 2A continuous lc • • Excellent gain characteristics to 2A High V CE0: up to 100 volts


    OCR Scan     		ZTX750 ZTX751 ZTX752 ZTX753 100mA 100ms ZTX650 100-C ZTX753 ferranti c6011 ZTX753 PNP Silicon Planar Medium Power Transistors FEATURES SE74 PDF

    Untitled

    Abstract: No abstract text available
    Text: W vys / RFP2N12L, RFP2N15L S e m ico n d ucto r 7 2A, 120V and 150V, 1.75 Ohm, Logic Level, N-Channel Power MOSFETs juiy 1998 Features Description • 2A, 120V and 150V The RFP2N12L and RFP2N15L are N-Channel enhance­ ment mode silicon gate power field effect transistors specifi­


    OCR Scan     		RFP2N12L, RFP2N15L RFP2N12L RFP2N15L AN7254 AN7260 PDF

    Untitled

    Abstract: No abstract text available
    Text: h a r ^ IRFF9220, IRFF9221, IRFF9222, IRFF9223 s s e m i c o n d u c t o r -2A and -2.5A, -150V and -200V, 1.5 and 2.4 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -2A and -2.5A, -150V and -200V • Linear Transfer Characteristics These are advanced power MOSFETs designed, tested, and


    OCR Scan     		IRFF9220, IRFF9221, IRFF9222, IRFF9223 -150V -200V, -200V PDF

    Untitled

    Abstract: No abstract text available
    Text: RFL2N05, RFL2N06 S E M I C O N D U C T O R 2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2A, 50V and 60V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such


    Original     		RFL2N05, RFL2N06 TA09378. TB334 095mA 75VDSS 50VDSS 25VDSS PDF

    l78s24ct

    Abstract: L78S L78S12CT
    Text: rZ Z Ä 7 # S G S -T H O M S O N L78S00 S E R IE S 2A POSITIVE VOLTAGE REGULATORS • OUTPUT CURRENT TO 2A' ■ OUTPUT VOLTAGES O F5 ; 7.5 ; 9 ; 10 ; 12 ; 15 ; 1 8 ; 24V ■ THERMAL OVERLOAD PROTECTION ■ SHORT CIRCUIT PROTECTION ■ OUTPUT TRANSISTOR SOA PROTECTION


    OCR Scan     		L78S00 L78S00 O-220 essenL78S00 l78s24ct L78S L78S12CT PDF

    STN2NF06

    Abstract: No abstract text available
    Text: STN2NF06 N - CHANNEL 60V - 0.12Ω - 2A - SOT-223 STripFET POWER MOSFET TYPE V DSS R DS on ID STN2NF06 60 V < 0.15 Ω 2A TYPICAL RDS(on) = 0.12 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED APPLICATION ORIENTED


    Original     		STN2NF06 OT-223 STN2NF06 PDF

    Untitled

    Abstract: No abstract text available
    Text: RFL2N05, RFL2N06 fÇ j HARRIS S E M I C O N D U C T O R 2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2A, 50V and 60V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such


    OCR Scan     		RFL2N05, RFL2N06 TA09378. 0-95i2 AN7254 AN7260. PDF

    Untitled

    Abstract: No abstract text available
    Text: RFP2N08, RFP2N10 HARRIS S E M I C O N D U C T O R 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 2A, 80V and 100V • Linear Transfer Characteristics These are N-channel enhancement mode silicon gate power field effect transistors designed for applications such as


    OCR Scan     		RFP2N08, RFP2N10 TA09282. AN7254 AN7260. PDF

    Untitled

    Abstract: No abstract text available
    Text: RFP2N20 interdi Data Sheet J u ly 1999 F ile N u m b e r 2 8 8 1 .2 Features 2A, 200V, 3.500 Ohm, N-Channel Power MOSFET • 2A .200V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,


    OCR Scan     		RFP2N20 TA09289. RFP2N20 O-220AB O-220AB AN7254 AN7260 PDF

    ZTX753

    Abstract: ZTX750 ZTX650 ZTX752 6.8j 100v Scans-00107864 c6011 Ferranti Semiconductors SE74 ZTX751
    Text: * FERRANTI semiconductors ZTX750 ZTX751 ZTX752 ZTX753 PNP Silicon Planar M e d i u m P o w e r Transistors FEATURES • 1.5W Pow er dissipation at T amb = 2 5 *C t • 2A con tin uous lc • Excellent gain characteristics to 2A • H igh V C E0 : up to 100 volts


    OCR Scan     		ZTX750 ZTX751 ZTX752 ZTX753 100mA 100ms ZTX753 ZTX650 6.8j 100v Scans-00107864 c6011 Ferranti Semiconductors SE74 PDF

    Untitled

    Abstract: No abstract text available
    Text: RFL2N05, RFL2N06 HARRIS S E M I C O N D U C T O R 2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2A, 50V and 60V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such


    OCR Scan     		RFL2N05, RFL2N06 TA09378. AN7254 AN7260. PDF

    STN2NF06

    Abstract: No abstract text available
    Text: STN2NF06 N - CHANNEL 60V - 0.12Ω - 2A - SOT-223 STripFET POWER MOSFET TYPE V DSS R DS on ID STN2NF06 60 V < 0.15 Ω 2A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.12 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED


    Original     		STN2NF06 OT-223 STN2NF06 PDF

    STS2DNE60

    Abstract: No abstract text available
    Text: STS2DNE60 DUAL N-CHANNEL 60V - 0.180Ω - 2A SO-8 STripFET POWER MOSFET TYPE STS2DNE60 • ■ ■ VDSS R DS on ID 60 V < 0.23 Ω 2A TYPICAL RDS(on) = 0.180Ω LOW THRESHOLD GATE DRIVE STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY DESCRIPTION


    Original     		STS2DNE60 STS2DNE60 PDF

    2A SOT23

    Abstract: stp6
    Text: STT2PF60L P-CHANNEL 60V - 0.20 Ω - 2A SOT23-6L STripFET II POWER MOSFET PRELIMINARY DATA • ■ ■ TYPE VDSS R DS on ID STT2PF60L 60 V <0.25 Ω 2A TYPICAL RDS(on) = 0.20 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE


    Original     		OT23-6L STT2PF60L 2A SOT23 stp6 PDF

    STN2NE10L

    Abstract: No abstract text available
    Text: STN2NE10L N - CHANNEL 100V - 0.33 Ω - 2A - SOT-223 STripFET POWER MOSFET PRELIMINARY DATA TYPE STN2NE10L • ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.4 Ω 2A TYPICAL RDS(on) = 0.33 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED


    Original     		STN2NE10L OT-223 STN2NE10L PDF

    STN2NE10

    Abstract: P008B DIODE
    Text: STN2NE10 N - CHANNEL 100V - 0.33 Ω - 2A - SOT-223 STripFET POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID STN2NE10 100 V < 0.4 Ω 2A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.33 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED


    Original     		STN2NE10 OT-223 STN2NE10 P008B DIODE PDF