Untitled
Abstract: No abstract text available
Text: STP4NB50 STP4NB50FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET PRELIMINARY DATA TYPE STP4NB50 STP4NB50FP • ■ ■ ■ ■ V DSS R DS on ID 500 V 500 V < 2.8 Ω < 2.8 Ω 3.8 A 2.5 A TYPICAL RDS(on) = 2.5 Ω 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES
|
Original
|
PDF
|
STP4NB50
STP4NB50FP
|
Untitled
Abstract: No abstract text available
Text: STD2NM60 STD2NM60-1 N-CHANNEL 600V - 2.8Ω - 2A DPAK/IPAK Zener-Protected MDmesh Power MOSFET • ■ ■ ■ ■ ■ TYPE V DSS R DS on ID STD2NM60 STD2NM60-1 600V 600V < 3.2 Ω < 3.2 Ω 2A 2A TYPICAL RDS(on) = 2.8 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES
|
Original
|
PDF
|
STD2NM60
STD2NM60-1
O-252
O-251
|
Untitled
Abstract: No abstract text available
Text: STD2NM60 STD2NM60-1 N-CHANNEL 600V - 2.8Ω - 2A DPAK/IPAK Zener-Protected MDmesh Power MOSFET • ■ ■ ■ ■ ■ TYPE V DSS R DS on ID STD2NM60 STD2NM60-1 600V 600V < 3.2 Ω < 3.2 Ω 2A 2A TYPICAL RDS(on) = 2.8 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES
|
Original
|
PDF
|
STD2NM60
STD2NM60-1
O-252
O-251
|
P4NB50FP
Abstract: P4NB50 SMPS SCHEMATIC DIAGRAM STP4NB50 STP4NB50FP p4nb5
Text: STP4NB50 STP4NB50FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET PRELIMINARY DATA TYPE ST P4NB50 ST P4NB50FP • ■ ■ ■ ■ V DSS R DS on ID 500 V 500 V < 2.8 Ω < 2.8 Ω 3.8 A 2.5 A TYPICAL RDS(on) = 2.5 Ω 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES
|
Original
|
PDF
|
STP4NB50
STP4NB50FP
P4NB50
P4NB50FP
P4NB50FP
P4NB50
SMPS SCHEMATIC DIAGRAM
STP4NB50
STP4NB50FP
p4nb5
|
BZT ZENER
Abstract: BZT52C2V4S BZT52C2V7S BZT52C3V0S BZT52C3V3S BZT52C3V6S BZT52C3V9S BZT52C4V3S BZT52-C47S zener 6v8
Text: BZT52C2V4S THRU BZT52C75S DC COMPONENTS CO., LTD. R RECTIFIER SPECIALISTS TECHNICAL SPECIFICATIONS OF SURFACE MOUNT ZENER DIODES SOD-323 FEATURES * * * * .110 2.8 .090(2.3) .071(1.8) .063(1.6) Planar Die construction Zener Voltages from 2.4V - 75V 200mW Power Dissipation
|
Original
|
PDF
|
BZT52C2V4S
BZT52C75S
OD-323
200mW
MIL-STD-202,
OD-323F
BZT52-SERIES
BZT ZENER
BZT52C2V4S
BZT52C2V7S
BZT52C3V0S
BZT52C3V3S
BZT52C3V6S
BZT52C3V9S
BZT52C4V3S
BZT52-C47S
zener 6v8
|
028N08N
Abstract: IPP02CN08N IPP028N08N3 JESD22 PG-TO220-3
Text: IPP028N08N3 G IPI028N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 80 V R DS(on),max 2.8 mΩ ID 100 A • Very low on-resistance R DS(on) previous engineering
|
Original
|
PDF
|
IPP028N08N3
IPI028N08N3
IPP02CN08N
PG-TO220-3
PG-TO262-3
028N08N
028N08N
IPP02CN08N
JESD22
PG-TO220-3
|
2306 mosfet
Abstract: s1815 WT2306 WT-2306 wt2306s06 wt sot23
Text: WT-2306 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT 2.8 AMPERES 1 Features: DRAIN SOURCE VOLTAGE GATE *Super high dense cell design for low R DS ON R DS(ON) <70 mΩ @VGS =4.0V R DS(ON) <95 mΩ @VGS =2.5V *Rugged and Reliable *SOT-23 Package
|
Original
|
PDF
|
WT-2306
OT-23
OT-23
2306 mosfet
s1815
WT2306
WT-2306
wt2306s06
wt sot23
|
Untitled
Abstract: No abstract text available
Text: WT-2306 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT * “G” Lead Pb -Free 2.8 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE *Super high dense cell design for low R DS(ON) R DS(ON) <70 mΩ @VGS =4.0V R DS(ON) <95 mΩ @VGS =2.5V
|
Original
|
PDF
|
WT-2306
OT-23
OT-23
|
028n06ls
Abstract: BSC028N06LS3 BSC028N06LS3 G JESD22
Text: BSC028N06LS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS on product (FOM) V DS 60 V R DS(on),max 2.8 mΩ ID 100
|
Original
|
PDF
|
BSC028N06LS3
028N06LS
028n06ls
BSC028N06LS3 G
JESD22
|
Hitachi DSA002789
Abstract: No abstract text available
Text: HVC350B Variable Capacitance Diode for VCO ADE-208-414 Z Rev 0 Features • • • • High capacitance ratio. (n = 2.8.min) Low series resistance. (r s = 0.5Ωmax) Good C-V linearity. Ultra small Flat Package (UFP) is suitable for surface mount design.
|
Original
|
PDF
|
HVC350B
ADE-208-414
HVC350B
470MHz
SC-79
Hitachi DSA002789
|
Hitachi DSA002788
Abstract: No abstract text available
Text: HVU350B Variable Capacitance Diode for VCO ADE-208-430A Z Rev 1 Features • • • • High capacitance ratio. (n = 2.8.min) Low series resistance. (r s = 0.5Ωmax) Good C-V linearity. Ultra small Resin Package (URP) is suitable for surface mount design.
|
Original
|
PDF
|
HVU350B
ADE-208-430A
HVU350B
470MHz
Hitachi DSA002788
|
Untitled
Abstract: No abstract text available
Text: WT-2306 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN * “G” Lead Pb -Free DRAIN CURRENT 2.8 AMPERS 1 Features: DRAIN SOUCE VOLTAGE 20 VOLTAGE GATE *Super high dense cell design for low R DS(ON) R DS(ON) <70 mΩ @VGS =4.0V R DS(ON) <95 mΩ @VGS =2.5V
|
Original
|
PDF
|
WT-2306
OT-23
OT-23
|
Outline Dimensions
Abstract: No abstract text available
Text: Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters 10.6 10.4 Hole Ø 3.4 3.1 2.8 2.6 3.7 3.2 7.31 6.91 16.0 15.8 16.4 15.4 10° 3.3 3.1 13.56 13.05 2.54 TYP. 0.61 0.38 0.9 0.7 2.54 TYP. R 0.7 2 places R 0.5 1.4 1.3 2.85 2.65
|
Original
|
PDF
|
O-220
20-Jul-11
Outline Dimensions
|
BSC028N06LS3
Abstract: BSC028N06 028n06ls PG-TDSON-8 IEC61249-2-21 JESD22
Text: BSC028N06LS3 G OptiMOS 3 Power-Transistor TM Product Summary Features • Ideal for high frequency switching and sync. rec. V DS 60 V • Optimized technology for DC/DC converters R DS on ,max 2.8 mΩ ID 100 A • Excellent gate charge x R DS(on) product (FOM)
|
Original
|
PDF
|
BSC028N06LS3
IEC61249-2-21
028N06LS
BSC028N06
028n06ls
PG-TDSON-8
IEC61249-2-21
JESD22
|
|
|
2SK3289
Abstract: DSA003643
Text: 2SK3289 Silicon N Channel MOS FET High Speed Switching ADE-208-743B Z Target Specification 3rd.Edition. December 1998 Features • Low on-resistance R DS = 1.26Ω typ. (at V GS =10V , ID =150mA) R DS = 2.8Ω typ. (at V GS =4V , ID =50mA) • 4V gate drive device
|
Original
|
PDF
|
2SK3289
ADE-208-743B
150mA)
2SK3289
DSA003643
|
Untitled
Abstract: No abstract text available
Text: SGS-THOMSON RfflD01ñ!<s [l[L[ie,ü’[KÍ@RDD S$ STP4NB50 STP4NB50FP N - CHANNEL ENHANCEMENT MODE _ PowerMESH MOSFET PRELIMINARY DATA TYPE STP 4N B50 S TP 4N B50FP V dss R d S( o i i ) Id 500 V 500 V < 2.8 Q. < 2.8 Q. 3.8 A 2.5 A • TYPICAL RDS(on) =2.5
|
OCR Scan
|
PDF
|
STP4NB50
STP4NB50FP
B50FP
STP4NB50/FP
O-22QFP
|
Untitled
Abstract: No abstract text available
Text: STB4NB50 N - CHANNEL 500V - 2.5Û - 3.8A - D2PAK/I2PAK _ PowerMESH MOSFET PRELIMINARY DATA TYPE V dss R dS oii Id STB 4N B50 500 V < 2.8 a 3.8 A • . . . . TYPICAL R D S (on) = 2.5 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
|
OCR Scan
|
PDF
|
STB4NB50
swi10
|
FS10KM-10
Abstract: 710a
Text: MITSUBISHI Neh POWER MOSFET FS10KM-10 HIGH-SPEED SWITCHING USE FS10KM-10 O UTLINE DRAW ING Dimensions in mm 10 ± 0.3 2.8 ± 0.2 « r Vd s s . 500V rDS ON (MAX) .0.90Í2
|
OCR Scan
|
PDF
|
FS10KM-10
O-220FN
571Q1
FS10KM-10
710a
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS70KMJ-2 HIGH-SPEED SWITCHING USE FS70KMJ-2 OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2.8 ± 0.2 • 4V D R IV E • VDSS . •100V • rDS ON (MAX) .
|
OCR Scan
|
PDF
|
FS70KMJ-2
115ns
O-220FN
|
FS22SM10
Abstract: FS22SM-10 ZD 103 ma
Text: MITSUBISHI Neh POWER MOSFET FS22SM-10 HIGH-SPEED SWITCHING USE FS22SM-10 OUTLINE DRAWING Dimensions in mm r- 4.5 f5.9MAX , <?3.2 m ± te f i t 4.4 Zi s 545 • Voss . 500V . 5.45 0.6 2.8
|
OCR Scan
|
PDF
|
FS22SM-10
FS22SM10
FS22SM-10
ZD 103 ma
|
STP5N90
Abstract: STP5N90FI CC-20-5
Text: SGS-THOMSON BteiOHLKeiTKsJiOei w /-v-n o . r- • TYPE V dss STP5N90 STP5N90FI . • . . . . , 900 V 900 V R STP5N90 STP5N90FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR d S O II < 2.4 Q < 2.4 Q Id 5A 2.8 A TYPICAL RDS(on) = 1.9 Q AVALANCHE RUGGED TECHNOLOGY
|
OCR Scan
|
PDF
|
STP5N90
STP5N90FI
STP5N90
STP5N90FI
gc34750
1000VOS
STP5N90/FI
CC-20-5
|
Brooktree an-12
Abstract: No abstract text available
Text: Brooktree Bt851 Circuit Description 24-bit R G B Input Mode Linear non-gamma corrected digital RGB data is input via the R 0-R 7, G 0-G 7, and B 0-B 7 inputs. If GAMMA* is low, gamma correction (2.2 for NTSC and 2.8 for PAL) is applied, and the result converted to
|
OCR Scan
|
PDF
|
24-bit
Bt851
Bt851KPJ
68-pin
0032flfl4
Drawing-68-Pin
Brooktree an-12
|
GL24
Abstract: marking code L05 SOT 23
Text: v G en e r a l S e m ic o n d u c t o r % GL05 thru GL24 Low Capacitance TVS Diode For High-Speed Data Interfaces TO-236AB SOT-23 Stand-off Voltage 5 to 24V Peak Pulse Power (8/20[js) 300W i •1 22 (3 .1) .110 2.8 Mounting Pad Layout .016(0.4) _ Ë Top View
|
OCR Scan
|
PDF
|
O-236AB
OT-23)
OT-23
E8-10K
8/20ns
8/20ps
GL24
marking code L05 SOT 23
|
IRF722
Abstract: IRF720 IRF7221
Text: iH A R R is IRF720, IRF721, IRF722, IRF723 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.8 A and 3.3A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
|
OCR Scan
|
PDF
|
IRF720,
IRF721,
IRF722,
IRF723
TA17404.
RF723
RF720,
RF722,
RF723
IRF722
IRF720
IRF7221
|
