Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    QUMZ2N_NPN MODEL Search Results

    QUMZ2N_NPN MODEL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SC5198 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation

    QUMZ2N_NPN MODEL Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    QUMZ2N_NPN model

    Abstract: BJT BF 167
    Text: SPICE PARAMETER UMZ2N * QUMZ2N_NPN BJT model * Date: 2006/11/30 .MODEL QUMZ2N_NPN NPN + IS=70.000E-15 + BF=277.08 + VAF=114.03 + IKF=1 + ISE=70.000E-15 + NE=1.8934 + BR=11.565 + VAR=100 + IKR=.11266 + ISC=1.0228E-12 + NC=1.3260 + NK=.71869 + RE=.2 + RB=13.897


    Original     		000E-15 0228E-12 342E-12 0230E-12 92E-12 25E-9 82E-12 QUMZ2N_NPN model BJT BF 167 PDF