JESD22-A104
Abstract: JESD22-A113 transistor A114 JESD22 JESD22A104 rf6285 JESD22-A114 A114 transistor NK80530VY400256 a118
Text: RF6285 Qualification Report Page 1 of 1 QLT-01093, Revision C Product Description A high-power, high‐efficiency multi‐band linear power amplifier module Package Type Laminate Module 5.5 x 6 x 1 mm Process Technology GaAs Qualification #
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RF6285
QLT-01093,
06QUAL757
JESD22A108,
JESD22A101,
JESD22A113
JESD22A103,
JESD22B102
JESD22
QAL-04-1049
JESD22-A104
JESD22-A113
transistor A114
JESD22
JESD22A104
JESD22-A114
A114 transistor
NK80530VY400256
a118
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JESD22-B117
Abstract: Latch up test JESD78 JESD22-B111 DTS04169EN DTS04193EN JEDEC JESD22-B117 dts04193 QLT POWER IEC-68-2-21 JESD78
Text: RF6280 Qualification Report Page 1 of 2 QLT-01087, Revision B Product Description A multi-functional power management unit DC‐DC converter Package Type WLCSP, 2 x 2 x 0.65 mm Process Technology Si Qualification # 06‐QUAL‐752 Date Issued
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RF6280
QLT-01087,
06QUAL752
JESD22A108,
JESD22A101,
JESD22A114
QAL-04-1049
JESD22
JESD22-B117
Latch up test JESD78
JESD22-B111
DTS04169EN
DTS04193EN
JEDEC JESD22-B117
dts04193
QLT POWER
IEC-68-2-21
JESD78
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transistor A114
Abstract: JESD22-A114 A114 transistor A114 JESD22-A103 a103 transistor JESD22-A108 ESD process A103 A101
Text: RF1126 Qualification Report Page 1 of 1 QLT-02971, Revision B Product Description Low power WCDMA SP2T switch Package Type 2 x 1.3 x 0.4 mm 6-pin QFN Process Technology GaAs Qualification # 08‐QUAL‐1061 08‐QUAL‐951 Date Issued 1/19/2009
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RF1126
QLT-02971,
08QUAL1061
08QUAL951
JESD22A108,
JESD22A101,
JESD22A114
JESD22A104,
JESD22A103,
JESD22B102
transistor A114
JESD22-A114
A114 transistor
A114
JESD22-A103
a103 transistor
JESD22-A108
ESD process
A103
A101
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JESD22-A104
Abstract: JESD22-A113 transistor A114 A114 transistor JESD22-B102 JESD22-C101 JESD22 JESD22-A114 transistor C101 A101
Text: RF1132 Qualification Report Page 1 of 1 QLT-03370, Revision B Product Description Broadband High Power SP3T Switch Package Type 2 x 2 x 0.55 mm 12-pin QFN Process Technology GaAs Qualification # 08‐QUAL‐1082 08‐QUAL‐1062 Date Issued
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RF1132
QLT-03370,
12pin
08QUAL1082
08QUAL1062
JESD22A108,
JESD22A101,
JESD22A114
JESD22A104,
JESD22A113
JESD22-A104
JESD22-A113
transistor A114
A114 transistor
JESD22-B102
JESD22-C101
JESD22
JESD22-A114
transistor C101
A101
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JESD22-A110
Abstract: JESD22-A104 JESD22A110 Latch up test JESD78 A104 diode JESD22-A115 transistor C101 JESD22-A108 IEC 68-2-21 JESD22-A114
Text: RF1450 Qualification Report Page 1 of 2 QLT-02952, Revision A Product Description Package Type Broadband High Power SP4T Switch QFN Process Technology GaAs, Si Date Issued 4/23/08 3mm x 3mm x 0.85mm Qualification # 07-Qual-922 FOR IMPORTANT INFORMATION REGARDING THESE MATERIALS INCLUDING DISCLAIMERS REGARDING USE IN CERTAIN
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RF1450
QLT-02952,
07-Qual-922
JESD22-A108
JESD22-A110
JESD22-A114
130C/85
RH/33
96hrs
JESD22-A110
JESD22-A104
JESD22A110
Latch up test JESD78
A104 diode
JESD22-A115
transistor C101
JESD22-A108
IEC 68-2-21
JESD22-A114
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JESD22-A110
Abstract: JESD22-A104 JESD22A110 JESD22-A113 b102 JESD22-A115 transistor C101 JESD22-A108 JESD22-A114 RF1200
Text: RF1200 Qualification Report Page 1 of 2 QLT-02953, Revision A Product Description Package Type Broadband High Power SPDT Switch QFN Process Technology GaAs Date Issued 4/23/08 2mm x 2mm x 0.85mm Qualification # 08-QUAL-932 FOR IMPORTANT INFORMATION REGARDING THESE MATERIALS INCLUDING DISCLAIMERS REGARDING USE IN CERTAIN
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RF1200
QLT-02953,
08-QUAL-932
JESD22-A108
JESD22-A110
JESD22-A114
130C/85
RH/33
96hrs
JESD22-A110
JESD22-A104
JESD22A110
JESD22-A113
b102
JESD22-A115
transistor C101
JESD22-A108
JESD22-A114
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Ericsson antennas
Abstract: No abstract text available
Text: Ericsson WLAN Bridge B3 Quick Installation Guide This Quick Installation Guide is intended for experienced installers and network administrators. All others should refer to the relevant sections in the Ericsson Wireless LAN User’s Guide. Package Contents
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Ericsson antennas
Abstract: Ericsson s3
Text: Ericsson Wireless LAN Station S3 Quick Installation Guide This Quick Installation Guide is intended for experienced installers and network administrators. All others should refer to the relevant sections in the Ericsson Wireless LAN User’s Guide. Package Contents
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74HC7266A
Abstract: No abstract text available
Text: TC74HC266AP/AF VTC74HC7266AP/AF T C 7 4 HC 2 66 AP/ AF T C74HC7266AP/ AF Q U A D E X C L U S I V E NOR G A T E Q U A D E X C L U S I V E NOR G A T E OP E N D R A I N T h e T C 7 4 H C 266A /7266A a r e h ig h sp e e d C M O S Q U A D E X C L U S I V E N O R G A T E f a b r ic a te d w ith silic o n g a te
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C74HC7266AP/
TC74HC266AP/AF
VTC74HC7266AP/AF
/7266A
TC74H
C7266A
TC74HC7266A
C266A
TC74HC266AP/AF
74HC7266A
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HC541A
Abstract: No abstract text available
Text: TC74HC540AP/AF TC74HC541AP/AF O C T A L BUS B U F F E R TC74HC540AP/AF IN V E R T IN G , 3 - S T A T E O UTPUTS TC74HC541AP/AF N O N - I N V E R T I N G . 3 - S T A T E O UTPU TS The TC74HC540A/TC74HC541A are high speed CMOS OC TR A L BUS BTJFFERs fab ricated w ith silicon gate
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TC74HC540AP/AF
TC74HC541AP/AF
TC74HC541AP/AF
TC74HC540A/TC74HC541A
TC74HC540A
HC541A
TC74HC541A
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Untitled
Abstract: No abstract text available
Text: 'ZTC74HC175AP/AF/AFN QUAD D-TYPE FLI P FLOP WITH CLEAR The TC74HC175A is a high speed CM OS D - T Y P E F L I P F L O P fabricated with silicon gate C2MOS technology. It achieves the high speed operation sim ilar to equivalent L S T T L while m aintaining the CM O S low power
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ZTC74HC175AP/AF/AFN
TC74HC175A
63MHz
TC74HC175AP/AF/AFN-4
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ior e78996
Abstract: IR E78996
Text: INTERNATIONAL RECTIFIER bSE D m INR MÖ55452 DDlbEL.^ T74 Bulletin E27104 International 1»] Rectifier IRFK4H150.IRFK4J150 Isolated Base Power H E X -p ak Assembly - Parallel Chip Configuration High Current Capability. UL recognised E78996. Electrically Isolated Base Plate.
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E27104
IRFK4H150
IRFK4J150
E78996.
T0-240
ior e78996
IR E78996
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mp212a
Abstract: MP7247 mp7246 P212A k22s 5MICROP
Text: 50E T> • L.m?444 0003413 2 ■ _ MICRO POWER SYSTEMS INC Section 9 Modem Chip Set T~1S-33-05 General Description The MP212A Is a highly versatile full duplex modem composed of two CM O S LSI circuits: the MP7246/76 and MP7247/77. With the MP212A. 300 and 1200 bit per second data communications can be easily designed Into a variety of systems using minimal
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1S-33-05
MP212A
MP7246/76
MP7247/77.
MP212A.
RS-232C
MP8104A
i7444
MP7247
mp7246
P212A
k22s
5MICROP
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2N3904
Abstract: 2N3906 2N3906 JEDEC
Text: 4SE D • =10=17250 0017746 IT O S H b TOSHIBA TRANSISTOR 2N3906 SILICON PNP EPITAXIAL T Y P E PCT PROCESS ~> TOSHIBA ' T ■i (DISCRETE/OPTO) FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : ICEV~“50nA(Max.)» lBEV=50nA(Max.)
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-50nA
-50mA,
2N3904
2N3906
Q0177S1
2N3904
2N3906
2N3906 JEDEC
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ask fsk psk
Abstract: automatic electrical bell v21 modem RS-232C Interface 25 Pin
Text: M I CR ON AS 45E J> IMCRN DATA COMMS MAS 2122 3 0 0 /1 2 0 0 BPS CMOS FULL DUPLEX MODEM T - 7 5 -33-05 FEATURES • Internal Universal Asynchronous Receiver Transmitter UART • DTMF or Pulse Dialing • Call Progress Tone Detection • Automatic Modem Handshaking
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RS-232C
300mW
ask fsk psk
automatic electrical bell
v21 modem
RS-232C Interface 25 Pin
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BUT28
Abstract: VN540 VN540-011Y VN540-012Y VN540SP
Text: VN540 / VN540SP / VN540 011 Y / VN540(012Y) HIGH SIDE SMART POWER SOLID STATE RELAY TYPE ^dem ag R DS(on) •o u t V cc -55V 50m ü 2.8A 36 V VN540 VN540SP VN540(011Y) VN540(012Y) ■ OUTPUT CURRENT (CONTINUOUS) : 2.8A ■ DIGITAL INPUT CLAMPED AT 32V ■ PROTECTION AGAINST: LOSS OF GROUND,
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VN540
VN540SP
VN540,
BUT28
VN540-011Y
VN540-012Y
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74LS00 truth table
Abstract: 74LS00J
Text: '/T QUAD 2-INPUT C 7 4 H NAND C 0 0 A P / A F / A F N -j GATE i T he TC74HC00A is a high speed CMOS 2 -IN P U T j N A N D G A T E fa b ricated w ith silicon g ate C 2 MOS technology. It achieves the high speed o p eratio n s im ila r to eq u iv alen t L STT L w hile m a in ta in in g the CMOS low pow er
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TC74HC00A
TC74HC00AP/AF/AFN-3
74LS00 truth table
74LS00J
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Untitled
Abstract: No abstract text available
Text: CY7C191 CY7C192 f ' 1Y P P T 7 C C SEMICONDUCTOR F eatures • Automatic power-down when deselected • Transparent write 7C19I • CMOS for optimum speed/power • High speed — U a = 2 s ns • Low active power — 660 mW • Low standby power — 193 mW
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CY7C191
CY7C192
7C192
7C19I)
CY7C192
38-00076-F
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Untitled
Abstract: No abstract text available
Text: TC74HCT157AP/AF TC74HCT158AP/AF TC74HCT157AP/AF TC74HCT158AP/AF QUAD 2 -C H A N N E L QUAD 2-C H A N N E L M ULTIPLEXER M ULTIP LEXE R IN VE R TING The TC74HCT157A and TC74HCT158A are high speed CMOS 2-C H A N N E L M ULTIPLEXERS fabricated with silicon gate C'M OS technology.
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TC74HCT157AP/AF
TC74HCT158AP/AF
TC74HCT157A
TC74HCT158A
TC74HCT157A
TC74HCT158A
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74HC00AP
Abstract: 74HC00A
Text: TC74HC00AP/AF/AFN QUAD 2-INPUT NAND GATE T h e TC 74H C 00A is a h ig h spe ed C M O S 2 - I N P U T N A N D G A T E f a b ric a te d w ith silicon g a te C ‘ MOS techn o lo g y . It a c h i e v e s t h e h i g h s p e e d o p e r a t i o n s i m i l a r to
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TC74HC00AP/AF/AFN
74HC00AP
74HC00A
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Untitled
Abstract: No abstract text available
Text: TC74HCT04AP/AF/AFN HEX I NV ER TE R T h e T C 7 4 H C T 04A is a h ig h speed C M O S IN V E R T E R f a b ric a te d w ith silic o n g a te C 2M O S tech n o lo g y . It a ch iev es the h ig h speed o p eratio n s im ila r to e q u iv a le n t L S T T L w hile m a in ta in in g the C M O S low pow er
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TC74HCT04AP/AF/AFN
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Untitled
Abstract: No abstract text available
Text: TC74HCT563AP/AF TC74HCT573AP/AF/AFW O CTAL D -T Y P E LA TC H W ITH 3 -S T A T E O UTPUT TC74HCT563A P/A F IN VER TIN G TC 74H C T573A P /A F/A FW N O N -IN V E R T IN G The TC74HCT563A and TC74HCT573A are high speed CMOS OCTAL LA TCH with 3 -S T A T E OUTPUT
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TC74HCT563AP/AF
TC74HCT573AP/AF/AFW
TC74HCT563A
T573A
TC74HCT573A
TC74HCT563A
TC74HCT573A
TC74H
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HC-425
Abstract: No abstract text available
Text: O C TA L BU S B U F F E R W IT H TC74HCT240AP/AF/AFW TC74HCT241 A P / A F TC74HCT244AP/AF/AFW TC74HCT240AP/AF/AFW TC74HCT241AP/AF TC74HCT244AP/AF/AFW T T L IN P U T L E V E L IN V E R T E D .3 - S T A T E O U T PU T S N O N - IN V E R T E D ,3 - S T A T E O U TPU TS
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TC74HCT240AP/AF/AFW
TC74HCT241
TC74HCT244AP/AF/AFW
TC74HCT241AP/AF
TC74HCT240A
HC-428
HC-425
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Untitled
Abstract: No abstract text available
Text: Preliminary data SIEMENS SGP30N60, SGB30N60, SGW30N60 Fast S-IGBT in NPT-Technology • 75 % lower E0ff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 is • Designed for moderate and high frequency applications:
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SGP30N60,
SGB30N60,
SGW30N60
O-220AB
O-263AB
SGP30N60
Q67041-A4713-A2
SGB30N60
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