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    QEB36 Search Results

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    QEB36 Price and Stock

    onsemi QEB363ZR

    EMITTER IR 940NM 50MA SMD
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    DigiKey QEB363ZR Cut Tape 8,036 1
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    QEB363ZR Digi-Reel 8,036 1
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    onsemi QEB363GR

    EMITTER IR 940NM 50MA SMD
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    DigiKey QEB363GR Digi-Reel 3,935 1
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    QEB363GR Cut Tape 3,935 1
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    QEB363GR Reel 3,000 1,000
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    onsemi QEB363

    EMITTER IR 940NM 50MA AXIAL
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    DigiKey QEB363 Bulk 1,091 1
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    Mouser Electronics QEB363 1,233
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    Rochester Electronics QEB363 985 1
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    onsemi QEB363YR

    EMITTER IR 940NM 50MA SMD
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    DigiKey QEB363YR Digi-Reel 1
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    QEB363YR Cut Tape 1
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    Avnet Americas QEB363YR Reel 0 Weeks, 2 Days 2,632
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    Mouser Electronics QEB363YR 1,305
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    Newark QEB363YR Reel 1,000
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    Rochester Electronics LLC QEB363YR

    INFRARED LED, 2MM, 940NM
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    DigiKey QEB363YR Bulk 907
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    QEB36 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    QEB363 Fairchild Semiconductor Subminiature Plastic Infrared Emitting Diode Original PDF
    QEB363 Fairchild Semiconductor SUBMINIATURE PLASTIC INFRARED EMITTING DIODE Original PDF
    QEB363.GR Fairchild Semiconductor LED IrLED 940NM Original PDF
    QEB363GR Fairchild Semiconductor Subminiature Plastic Infrared Emitting Diode Original PDF
    QEB363.YR Fairchild Semiconductor LED IrLED 940NM Original PDF
    QEB363YR Fairchild Semiconductor Subminiature Plastic Infrared Emitting Diode Original PDF
    QEB363.ZR Fairchild Semiconductor LED IrLED 940NM Original PDF
    QEB363ZR Fairchild Semiconductor Subminiature Plastic Infrared Emitting Diode Original PDF

    QEB36 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    QEB363GR

    Abstract: QEB 123
    Text: T-3/4, 2mm DIODE Ordering Information To order QEB or QSB subminiature products on tape and reel include the appropriate standard product part number and suffix code to specify the lead form and packaging method. QEB363GR Packaging Code Lead Form Code Standard Product Part Number


    Original
    QEB363GR 000/Reel RS-481. RS-481 QEB363GR QEB 123 PDF

    QEB363

    Abstract: No abstract text available
    Text: QEB363 SUBMINIATURE PLASTIC INFRARED EMITTING DIODE PACKAGE DIMENSIONS CATHODE 0.276 7.0 MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.019 (0.5) 0.012 (0.3) FEATURES 0.074 (1.9) • T-3/4 (2mm) Surface Mount Package • Tape & Reel Option (See Tape & Reel Specifications)


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    QEB363 QSB363 100007C QEB363 PDF

    QEB363

    Abstract: No abstract text available
    Text: QEB363 SUBMINIATURE PLASTIC INFRARED EMITTING DIODE PACKAGE DIMENSIONS CATHODE 0.276 7.0 MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.019 (0.5) 0.012 (0.3) FEATURES 0.074 (1.9) • T-3/4 (2mm) Surface Mount Package • Tape & Reel Option (See Tape & Reel Specifications)


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    QEB363 940nm, QSB363 00007A QEB363 PDF

    PLCC2 diode

    Abstract: QEB363 QEB373 QEB421 QEB441
    Text: Optoelectronics Surface Mount Light Emitting Diodes Ie @ 100 mA IF mW/sr IR @ 5 V VR (µA) max Emission Angle in Degrees (°) @ 1/2 Power Wavelength (nm) λp min max VF @ 100 mA IF (V) max QEB363 8 – 1.7 100 24 940 QEB373 16 – 1.9 100 24 880 IR @ 5 V VR


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    QEB363 QEB373 QEB421 QEB441 PLCC2 diode QEB363 QEB373 QEB421 QEB441 PDF

    QEB363

    Abstract: QSB363
    Text: SUBMINIATURE PLASTIC INFRARED EMITTING DIODE QEB363 PACKAGE DIMENSIONS CATHODE 0.276 7.0 MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.019 (0.5) 0.012 (0.3) 0.074 (1.9) .118 (3.0) .102 (2.6) .059 (1.5) .051 (1.3) 0.055 (1.4) 0.008 (0.21) 0.004 (0.11)


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    QEB363 QEB363 QSB363 PDF

    QEB363

    Abstract: QSB363
    Text: QEB363 SUBMINIATURE PLASTIC INFRARED EMITTING DIODE PACKAGE DIMENSIONS CATHODE 0.276 7.0 MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.019 (0.5) 0.012 (0.3) FEATURES 0.074 (1.9) • T-3/4 (2mm) Surface Mount Package • Tape & Reel Option (See Tape & Reel Specifications)


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    QEB363 QSB363 100007C QEB363 QSB363 PDF

    QEB363

    Abstract: QSB363
    Text: QEB363 Subminiature Plastic Infrared Emitting Diode tm Features • T-3/4 2mm Surface Mount Package ■ Tape & Reel Option (See Tape & Reel Specifications) ■ Lead Form Options: Gullwing, Yoke, Z-Bend ■ Narrow Emission Angle, 24° ■ Wavelength = 940nm, GaAs


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    QEB363 940nm, QSB363 QEB363 QSB363 PDF

    QEB363

    Abstract: No abstract text available
    Text: QEB363 Subminiature Plastic Infrared Emitting Diode tm Features • T-3/4 2mm Surface Mount Package ■ Tape & Reel Option (See Tape & Reel Specifications) ■ Lead Form Options: Gullwing, Yoke, Z-Bend ■ Narrow Emission Angle, 24° ■ Wavelength = 940nm, GaAs


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    QEB363 940nm, QSB363 QEB363 PDF

    Infrared Phototransistor

    Abstract: QSB363 QEB363 QEB373
    Text: SUBMINIATURE PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSB363 PACKAGE DIMENSIONS EMITTER 0.276 7.0 MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.019 (0.5) 0.012 (0.3) 0.074 (1.9) .059 (1.5) .051 (1.3) .118 (3.0) .102 (2.6) 0.055 (1.4) 0.008 (0.21)


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    QSB363 QSB363 DS300357 Infrared Phototransistor QEB363 QEB373 PDF

    7402 ic configuration

    Abstract: QSB363
    Text: QSB363 Subminiature Plastic Silicon Infrared Phototransistor • Daylight Filter ■ Tape & Reel Option See Tape & Reel Specifications ■ Lead Form Options: Gullwing, Yoke, Z-Bend Features ■ ■ ■ ■ ■ NPN Silicon Phototransistor T-3/4 (2mm) Surface Mount Package


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    QSB363 QEB363 QEB373 7402 ic configuration PDF

    Infrared Phototransistor

    Abstract: phototransistor 500-600 nm QEB373 "infrared phototransistor" all datasheet phototransistor QEB363 npn phototransistor QSB363
    Text: SUBMINIATURE PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSB363 PACKAGE DIMENSIONS EMITTER 0.276 7.0 MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.019 (0.5) 0.012 (0.3) 0.074 (1.9) .059 (1.5) .051 (1.3) .118 (3.0) .102 (2.6) 0.055 (1.4) 0.008 (0.21)


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    QSB363 QSB363 DS300357 Infrared Phototransistor phototransistor 500-600 nm QEB373 "infrared phototransistor" all datasheet phototransistor QEB363 npn phototransistor PDF

    Infrared Phototransistor

    Abstract: c 5802 7402 ic configuration QSB363 QEB363 QEB373 IC 7402
    Text: QSB363 Subminiature Plastic Silicon Infrared Phototransistor Features Description • NPN Silicon Phototransistor The QSB363 is a silicon phototransistor encapsulated in a black infrared transparent T-3/4 package. ■ T-3/4 2mm Surface Mount Package ■ Medium Wide Beam Angle, 24°


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    QSB363 QSB363 QEB363 QEB373 Infrared Phototransistor c 5802 7402 ic configuration QEB373 IC 7402 PDF

    QEB363

    Abstract: QEB373 QSB363 QSB363C Infrared Phototransistor
    Text: QSB363C Subminiature Plastic Silicon Infrared Phototransistor Features Description • NPN Silicon Phototransistor The QSB363 is a silicon phototransistor encapsulated in a clear infrared T-3/4 package. ■ T-3/4 2mm Surface Mount Package ■ Medium Wide Beam Angle, 24°


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    QSB363C QSB363 QEB363 QEB373 QSB363C QEB373 Infrared Phototransistor PDF

    QEB363

    Abstract: No abstract text available
    Text: QSB363 SUBMINIATURE PLASTIC SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS EMITTER 0.276 7.0 MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.019 (0.5) 0.012 (0.3) 0.074 (1.9) SCHEMATIC COLLECTOR FEATURES .059 (1.5) .051 (1.3) .118 (3.0) .102 (2.6)


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    QSB363 QEB363 QEB373 00009A PDF

    QRB1134

    Abstract: H22A2 QRB1113 QRB1114 QRD1114 LED55C QSE113 QSC112 QSE157 QSE158
    Text: Index Part Number 1N6264 1N6265 BPW36 BPW37 BPW38 CNY28 CNY29 CNY36 CQX14 CQX15 CQX16 CQX17 F5D1 F5D2 F5D3 F5E1 F5E2 F5E3 H21A1 H21A2 H21A3 H21A4 H21A5 H21A6 H21B1 H21B2 H21B3 H21B4 H21B5 H21B6 H21LOB H21LOI H21LTB H21LTI H22A1 H22A2 H22A3 H22A4 H22A5 H22A6


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    1N6264 1N6265 BPW36 BPW37 BPW38 CNY28 CNY29 CNY36 CQX14 CQX15 QRB1134 H22A2 QRB1113 QRB1114 QRD1114 LED55C QSE113 QSC112 QSE157 QSE158 PDF

    L14F1 phototransistor datasheet

    Abstract: L14F1 PHOTOTRANSISTOR phototransistor 3 pin L14F1 Phototransistor L14F1 l14f1 ir phototransistor T1 L14F1 Phototransistor L14G3 L14F1 PHOTOTRANSISTOR PIN opto transistor moc 12v LED 55 with L14F1 phototransistor
    Text: Optoelectronics Light Emitting Diodes Light Emitting Diodes LED , Plastic Package Ie (mW/sr) CIF = 100 mA Max IR (µA) @ VR = 5V Emission Angle in Degrees (°) @ 1/2 Intensity Wavelength (nm) λp Min Max Max VF (V) @ IF = 100 mA QEC112 6 30 1.7 10 24 940


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    QEC112 QEC113 QEC121 QEC122 QEC123 QED233 QED234 QED633 QED634 QED121 L14F1 phototransistor datasheet L14F1 PHOTOTRANSISTOR phototransistor 3 pin L14F1 Phototransistor L14F1 l14f1 ir phototransistor T1 L14F1 Phototransistor L14G3 L14F1 PHOTOTRANSISTOR PIN opto transistor moc 12v LED 55 with L14F1 phototransistor PDF

    QEB363

    Abstract: No abstract text available
    Text: QSB363C Subminiature Plastic Silicon Infrared Phototransistor • Tape & Reel Option See Tape & Reel Specifications ■ Lead Form Options: Gullwing, Yoke, Z-Bend Features ■ ■ ■ ■ ■ NPN Silicon Phototransistor T-3/4 (2mm) Surface Mount Package Medium Wide Beam Angle, 24°


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    QSB363C QEB363 QEB373 QSB363 PDF

    Untitled

    Abstract: No abstract text available
    Text: QSB363C Subminiature Plastic Silicon Infrared Phototransistor Features Description • NPN Silicon Phototransistor The QSB363 is a silicon phototransistor encapsulated in a clear infrared T-3/4 package. ■ T-3/4 2mm Surface Mount Package ■ Medium Wide Beam Angle, 24°


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    QSB363C QSB363 QEB363 QEB373 QSB363C PDF

    4n35 optocoupler spice model

    Abstract: L14F1 phototransistor datasheet MOC3043-M spice model H11F1 SPICE MODEL h11D1 spice MOC3010 spice L14F1 PHOTOTRANSISTOR slotted optocouplers DARLINGTON phototransistor l14f1 spice MOC3011
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


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    TS-16949 ISO-14001, 4n35 optocoupler spice model L14F1 phototransistor datasheet MOC3043-M spice model H11F1 SPICE MODEL h11D1 spice MOC3010 spice L14F1 PHOTOTRANSISTOR slotted optocouplers DARLINGTON phototransistor l14f1 spice MOC3011 PDF

    Untitled

    Abstract: No abstract text available
    Text: Surface Mount Light Emitting Diodes T- 3/4 2 mm Diode Package CATHODE 0.276 (7.0) MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.019 (0.5) 0.012 (0.3) 0.074 (1.9) .059 (1.5) .051 (1.3) 0.118 (3.0) 0.102 (2.6) 0.055 (1.4) 0.008 (0.21) 0.004 (0.11)


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    QEB363 QEB373 QEB421 QEB441 PDF

    QEB363

    Abstract: QEB373 QSB363C Infrared Phototransistor 01060
    Text: QSB363C Subminiature Plastic Silicon Infrared Phototransistor • Tape & Reel Option See Tape & Reel Specifications ■ Lead Form Options: Gullwing, Yoke, Z-Bend Features ■ ■ ■ ■ ■ NPN Silicon Phototransistor T-3/4 (2mm) Surface Mount Package Medium Wide Beam Angle, 24°


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    QSB363C QEB363 QEB373 QSB363C QEB373 Infrared Phototransistor 01060 PDF

    024T1

    Abstract: No abstract text available
    Text: OPTOELECTRONICS SUBMINIATURE EMITTERS AND PHOTOSENSORS P a rt N um ber E m itte r s T -3 /4 087 i2.2l 071 il.S l I 7 0. MIN j rJ 024 1 ¿1 ,0i6 1 41 ! IB 3 O' 102 :2 6. : QEB363 t j oa.3 tiO'Ji 1 r \ n 1 , \ j ±12° 8 — mW/sr 1.6/20 100/5 1,3 16 —


    OCR Scan
    QEB363 QEB373 024T1 PDF

    QEC122C6R0

    Abstract: No abstract text available
    Text: TAPE AND REEL SPECIFICATIONS T-1 AND T-1 3/4 PACKAGES OPTOELECTRONICS O R D E R IN G IN F O R M A T IO N L E A D S P A C IN G C O D E To order Infrared IR Products on tape and reel or ammopack, include the appropriate standard product part num ber and suffix code to specify configura­


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    QEC122 RS-481. RS-481 QEC122C6R0 PDF

    Untitled

    Abstract: No abstract text available
    Text: EO OPTOELECTRONICS SU BM IN IA TU RE E M IT T E R S AND P H O T O SEN SO R S P a r ! T-3/4 E m i s s i o n N i-m b * — .276 7 0 - - i .071 <1J) ! | (E m it t e » i>3 ^ <2 P o w f i UKÌH •M 1R' ^ R A \ \ Ì X ! {(,* A ¡¡i V 1 - St il >, N ote '21$ n


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    QEB363 QEB373 PDF