AG29
Abstract: ipug45_01.5 transistor w1d transistor w4B SRAM SAMSUNG FC1152 3ah22
Text: ispLever CORE TM QDRII+ SRAM Controller MACO Core User’s Guide June 2008 ipug45_01.5 QDRII+ SRAM Controller MACO Core User’s Guide Lattice Semiconductor Introduction Lattice’s QDRII and QDRII+ QDRII/II+ SRAM Controller MACO core assists the FPGA designer’s efforts by
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ipug45
AG29
ipug45_01.5
transistor w1d
transistor w4B
SRAM SAMSUNG
FC1152
3ah22
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Untitled
Abstract: No abstract text available
Text: ADVANCE‡ 2 MEG x 8, 1 MEG x 18, 512K x 36 1.8V VDD, HSTL, QDRIIb2 SRAM 18Mb QDR II SRAM 2-Word Burst MT54W2MH8B MT54W1MH18B MT54W512H36B FEATURES 165-BALL FBGA • 18Mb Density 2 Meg x 8, 1 Meg x 18, 512K x 36 • DLL circuitry for wide-output, data valid window
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MT54W1MH18B
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Untitled
Abstract: No abstract text available
Text: QDRII SRAM Controller MegaCore Function Errata Sheet February 2005, MegaCore Version 1.0.0 Introduction This document addresses known errata and documentation changes for version 1.0.0 of the QDRII SRAM Controller MegaCore Function. Errata are design functional defects or errors. Errata may cause the
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ModelSim
Abstract: No abstract text available
Text: QDRII SRAM Controller MegaCore Function Errata Sheet June 2007, MegaCore Version 7.1 This document addresses known errata and documentation issues for the QDRII SRAM Controller MegaCore function version 7.1. Errata are functional defects or errors, which may cause the QDRII SRAM
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DDR2 sdram pcb layout guidelines
Abstract: Memory Interfaces BGA and eQFP Package EP3C10 EP3C120 EP3C16 EP3C25 EP3C40 EP3C55 SSTL-18
Text: 9. External Memory Interfaces in Cyclone III Devices CIII51009-1.1 Introduction In addition to an abundant supply of on-chip memory, Cyclone III devices can easily interface to a broad range of external memory including DDR2 SDRAM, DDR SDRAM, and QDRII SRAM.
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CIII51009-1
DDR2 sdram pcb layout guidelines
Memory Interfaces
BGA and eQFP Package
EP3C10
EP3C120
EP3C16
EP3C25
EP3C40
EP3C55
SSTL-18
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Untitled
Abstract: No abstract text available
Text: K7R323684C K7R321884C K7R320984C Preliminary TM 1Mx36, 2Mx18 & 4Mx9 QDR II b4 SRAM 36Mb QDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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K7R323684C
K7R321884C
K7R320984C
1Mx36,
2Mx18
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K7R643684
Abstract: No abstract text available
Text: K7R643684M K7R641884M 2Mx36 & 4Mx18 QDRTM II b4 SRAM 72Mb M-die QDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K7R643684M
K7R641884M
2Mx36
4Mx18
11x15
K7R643684
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Untitled
Abstract: No abstract text available
Text: User Guide for QDRII as QDRI 18Mb QDRI 2Burst B-die Preliminary 512Kx36 & 1Mx18 QDR TM b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Technical Note Revision History History Draft Date Remark 0.0 1. Initial document. April. 29, 2003 Advance 0.1 1. Delete the -20 speed bin part.
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512Kx36
1Mx18
512Kx36-bit,
1Mx18-bit
11x15
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Untitled
Abstract: No abstract text available
Text: Samsung Samsung Secret Secret SAMSUNG QDRII+/DDRII+ 16Mb C-die Specification Change Notice July, 2008 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application Application Eng.
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K7K1636T2C
K7K1618T2C
512Kx36
K7S1636T4C
K7S1618T4C
1Mx18
11x15
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IDT71P72104
Abstract: IDT71P72204 IDT71P72604 IDT71P72804
Text: Advance Information IDT71P72204 IDT71P72104 IDT71P72804 IDT71P72604 18Mb Pipelined QDR II SRAM Burst of 2 Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description The IDT QDRIITM Burst of two SRAMs are high-speed synchronous memories with independent, double-data-rate DDR , read and write
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IDT71P72204
IDT71P72104
IDT71P72804
IDT71P72604
x18/36
IDT71P72104
IDT71P72204
IDT71P72604
IDT71P72804
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Untitled
Abstract: No abstract text available
Text: ADVANCE‡ 2 MEG x 8, 1 MEG x 18, 512K x 36 1.8V VDD, HSTL, QDRIIb2 SRAM 18Mb QDR II SRAM 2-Word Burst MT54W2MH8B MT54W1MH18B MT54W512H36B FEATURES 165-BALL FBGA • 18Mb Density 2 Meg x 8, 1 Meg x 18, 512K x 36 • DLL circuitry for wide-output, data valid window
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Untitled
Abstract: No abstract text available
Text: QDRII SRAM Controller MegaCore Function Errata Sheet September 2005, MegaCore Version 1.1.0 Introduction This document addresses known errata and documentation changes for version 1.1.0 of the QDRII SRAM Controller MegaCore function. Errata are design functional defects or errors. Errata may cause the QDRII
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SRAM controller
Abstract: No abstract text available
Text: QDRII SRAM Controller Release Notes December 2006, MegaCore Version 6.1 These release notes for the QDRII SRAM Controller MegaCore function version 6.1 contain the following information: • ■ ■ ■ ■ System Requirements System Requirements New Features & Enhancements
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SRAM controller
Abstract: AMD64
Text: QDRII SRAM Controller Release Notes November 2005, MegaCore Version 1.2.1 These release notes for the QDRII SRAM Controller MegaCore function version 1.2.1 contain the following information: • ■ ■ ■ ■ ■ System Requirements System Requirements
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2000/XP
32-bit
AMD64,
EM64T
32-bit
64-bire
SRAM controller
AMD64
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D0-35
Abstract: No abstract text available
Text: User Guide for QDRII as QDRI 36Mb QDRI 4Busrt B-die Advance 1Mx36 & 2Mx18 QDR TM b4 SRAM Document Title 1Mx36-bit, 2Mx18-bit QDR TM SRAM Technical Note Revision History Rev. No. 0.0 History Draft Date Remark 1. Initial document. June. 19, 2003 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
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1Mx36
2Mx18
1Mx36-bit,
2Mx18-bit
11x15
D0-35
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Untitled
Abstract: No abstract text available
Text: R1QAA72 / R1QDA72 Series R1QAA7236ABG / R1QAA7218ABG / R1QAA7209ABG R1QDA7236ABG / R1QDA7218ABG / R1QDA7209ABG R1QGA7236ABG / R1QGA7218ABG / R1QGA7209ABG R1QKA7236ABG / R1QKA7218ABG / R1QKA7209ABG
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0000---QDRII+
R1QAA72
R1QDA72
R1QAA7236ABG
R1QAA7218ABG
R1QAA7209ABG
R1QDA7236ABG
R1QDA7218ABG
R1QDA7209ABG
R1QGA7236ABG
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Untitled
Abstract: No abstract text available
Text: K7S1636T4C K7S1618T4C 512Kx36 & 1Mx18 QDRTM II+ b4 SRAM 18Mb QDRII+ SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K7S1636T4C
K7S1618T4C
512Kx36
1Mx18
11x15
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micron sram
Abstract: G38-87 MT54W1MH18J MT54W2MH8J MT54W512H36J
Text: 2 MEG x 8, 1 MEG x 18, 512K x 36 1.8V VDD, HSTL, QDRIIb4 SRAM 18Mb QDR II SRAM 4-WORD BURST MT54W2MH8J MT54W1MH18J MT54W512H36J Features • DLL circuitry for accurate output data placement • Separate independent read and write data ports with concurrent transactions
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MT54W2MH8J
MT54W1MH18J
MT54W512H36J
MT54W1MH18J
micron sram
G38-87
MT54W2MH8J
MT54W512H36J
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Untitled
Abstract: No abstract text available
Text: R1QAA72 / R1QDA72 Series R1QAA7236ABB / R1QAA7218ABB R1QDA7236ABB / R1QDA7218ABB 72-Mbit QDR II+ SRAM 4-word Burst R10DS0169EJ0011 Rev. 0.11 2013.01.15 Description
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0000---QDRII+
R1QAA72
R1QDA72
R1QAA7236ABB
R1QAA7218ABB
R1QDA7236ABB
R1QDA7218ABB
72-Mbit
A7236
152-word
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date code marking samsung
Abstract: No abstract text available
Text: R1QAA72 / R1QDA72 Series R1QAA7236ABG / R1QAA7218ABG R1QDA7236ABG / R1QDA7218ABG 72-Mbit QDR II+ SRAM 4-word Burst R10DS0180EJ0011 Rev. 0.11 2013.01.15 Description
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0000---QDRII+
R1QAA72
R1QDA72
R1QAA7236ABG
R1QAA7218ABG
R1QDA7236ABG
R1QDA7218ABG
72-Mbit
A7236
152-word
date code marking samsung
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Untitled
Abstract: No abstract text available
Text: ADVANCE‡ 4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36 1.8V VDD, HSTL, QDRIIb4 SRAM 36Mb QDR II SRAM 4-WORD BURST MT54W4MH8J MT54W4MH9J MT54W2MH18J MT54W1MH36J FEATURES Figure 1 165-Ball FBGA • DLL circuitry for accurate output data placement • Separate independent read and write data ports with
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MT54W4MH8J
MT54W4MH9J
MT54W2MH18J
MT54W1MH36J
165-Ball
MT54W1MH36J
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K7R321882C
Abstract: No abstract text available
Text: K7R323682C K7R321882C K7R320982C Preliminary 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM 36Mb QDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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K7R323682C
K7R321882C
K7R320982C
1Mx36
2Mx18
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K7R643682MF
Abstract: IR 10D 6g
Text: K7R643682M K7R641882M K7R640982M 2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM 72Mb QDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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K7R643682M
K7R641882M
K7R640982M
2Mx36
4Mx18
K7R643682MF
IR 10D 6g
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Untitled
Abstract: No abstract text available
Text: K7S1636U4C K7S1618U4C 512Kx36 & 1Mx18 QDRTM II+ b4 SRAM 18Mb QDRII+ SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K7S1636U4C
K7S1618U4C
512Kx36
1Mx18
11x15
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