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    XY 805 ic

    Abstract: microwave transducer marking A04 BFY180 on semiconductor marking code A04
    Text: HiRel NPN Silicon RF Transistor BFY 180 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low power amplifiers at collector currents from 0.2 to 2.5 mA ¥ Hermetically sealed microwave package ¥ fT = 6.5 GHz, F = 2.6 dB at 2 GHz ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5611/006


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    PDF Q97301013 Q97111419 Q97111419 BFY180 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 XY 805 ic microwave transducer marking A04 on semiconductor marking code A04

    Q971

    Abstract: BFY180
    Text: BFY180 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low power amplifiers at collector currents from 0,2 mA to 2,5 mA. • Hermetically sealed microwave package • fT= 6,5 GHz F = 2.6 dB at 2 GHz • Space Qualified


    Original
    PDF BFY180 Q97301013 QS9000 Q971 BFY180

    q973

    Abstract: No abstract text available
    Text: BFY180 HiRel NPN Silicon RF Transistor • • • • • HiRel Discrete and Microwave Semiconductor 4 3 1 2 For low power amplifiers at collector currents from 0,2 mA to 2,5 mA. Hermetically sealed microwave package fT= 6,5 GHz F = 2.6 dB at 2 GHz Space Qualified


    Original
    PDF BFY180 BFY180 Q97301013 Q97111419 QS9000 q973

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS HiRel NPN Silicon RF Transistor BFY180 Features • HiRel Discrete and Microwave Semiconductor • For low power amplifiers at collector currents from 0.2 to 2.5 mA • Hermetically sealed microwave package • f T = 6.5 GHz, F = 2.6 dB at 2 GHz •


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    PDF BFY180 Q97301013 Q97111419 BFY180 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552