simple LM324 COMPARATOR CIRCUIT DIAGRAM
Abstract: lm358 led driver
Text: LMV321-N, LMV358-N, LMV358-N-Q1, LMV358-N-Q3, LMV324-N www.ti.com SNOS012G – MAY 2004 – REVISED JANUARY 2013 LMV321/LMV358/LMV358-Q1/LMV358-Q3/LMV324 Single/Dual/Quad General Purpose, Low Voltage, Rail-to-Rail Output Operational Amplifiers Check for Samples: LMV321-N, LMV358-N, LMV358-N-Q1, LMV358-N-Q3, LMV324-N
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LMV321-N,
LMV358-N,
LMV358-N-Q1,
LMV358-N-Q3,
LMV324-N
SNOS012G
LMV321/LMV358/LMV358-Q1/LMV358-Q3/LMV324
simple LM324 COMPARATOR CIRCUIT DIAGRAM
lm358 led driver
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DC voltage meter
Abstract: T1G6000528-Q3 RF TRANSISTOR sit transistor T1G6000528 transistor sit transistor the 6 MHz "RF Power Transistor" GaN TRANSISTOR multimeter probes
Text: T1G6000528-Q3 Evaluation Board Biasing Instructions Available Fixtures: TriQuint offers two individual wideband evaluation boards for the T1G6000528-Q3 device, which is a GaN RF Power transistor designed to operate from 20 MHz to 6 GHz in wideband circuits. One evaluation board operates
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T1G6000528-Q3
T1G6000528-Q3
DC voltage meter
RF TRANSISTOR
sit transistor
T1G6000528
transistor sit
transistor the 6 MHz
"RF Power Transistor"
GaN TRANSISTOR
multimeter probes
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VND14N04
Abstract: TD340 full bridge driver n 6k mosfet OMNIFET H117 TD340 H-bridge Mosfet Driver mosfet morocco AN1304 AN1305
Text: AN1304 APPLICATION NOTE USING THE TD340 : H-BRIDGE DRIVER FOR DC-MOTOR CONTROL by J-F GARNIER can be used by the means of only two lost cost bipolar transistors. When the system is idle, transistor Q3 blocks the supply voltage. When the user press the command switch SW1, Q3 is activated and
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AN1304
TD340
TD340.
TD340
VND14N04
TD340 full bridge driver
n 6k mosfet
OMNIFET
H117
H-bridge Mosfet Driver
mosfet morocco
AN1304
AN1305
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h-bridge pwm schematics circuit
Abstract: h-bridge gate drive schematics circuit TD340 full bridge driver mosfet based h bridge full bridge high speed mosfet driver VND14N04 mosfet overcurrent TD340 shunt resistor current motor analog switch circuit using mosfet
Text: AN1304 APPLICATION NOTE USING THE TD340 : H-BRIDGE DRIVER FOR DC-MOTOR CONTROL by J-F GARNIER can be used by the means of only two lost cost bipolar transistors. When the system is idle, transistor Q3 blocks the supply voltage. When the user press the command switch SW1, Q3 is activated and
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AN1304
TD340
TD340.
TD340
h-bridge pwm schematics circuit
h-bridge gate drive schematics circuit
TD340 full bridge driver
mosfet based h bridge
full bridge high speed mosfet driver
VND14N04
mosfet overcurrent
shunt resistor current motor
analog switch circuit using mosfet
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h-bridge pwm schematics circuit
Abstract: OMNIFET transistor digital 47k 22k PNP NPN H117 TD340 full bridge driver STP60NE06 TD340 shunt resistor current motor AN1304 AN1305
Text: AN1304 APPLICATION NOTE USING THE TD340 : H-BRIDGE DRIVER FOR DC-MOTOR CONTROL by J-F GARNIER can be used by the means of only two lost cost bipolar transistors. When the system is idle, transistor Q3 blocks the supply voltage. When the user press the command switch SW1, Q3 is activated and
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AN1304
TD340
TD340.
TD340
h-bridge pwm schematics circuit
OMNIFET
transistor digital 47k 22k PNP NPN
H117
TD340 full bridge driver
STP60NE06
shunt resistor current motor
AN1304
AN1305
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M4150
Abstract: APT0406 APT0502 APTCV50H60T3G
Text: APTCV50H60T3G Trench & Field Stop IGBT Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full - Bridge NPT & Trench + Field Stop® IGBT Power module 13 CoolMOS Q2, Q4: VCES = 600V ; IC = 49A @ Tc = 25°C 14 Application Q1 Q3 CR1 • Solar converter CR3 18 11
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APTCV50H60T3G
M4150
APT0406
APT0502
APTCV50H60T3G
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1465F
Abstract: M4150 APT0406 APT0502 CR152
Text: APTCV40H60CT1G Full - Bridge CoolMOS & Trench + Field Stop IGBT Power module Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q2, Q4: VDSS = 600V ; ID = 36A @ Tc = 25°C Application 3 4 • Solar converter Features Q3 Q1
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APTCV40H60CT1G
APTCV50H60CT1G
1465F
M4150
APT0406
APT0502
CR152
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Untitled
Abstract: No abstract text available
Text: APTCV40H60CT1G Full - Bridge CoolMOS & Trench + Field Stop IGBT Power module Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q2, Q4: VDSS = 600V ; ID = 36A @ Tc = 25°C Application 3 4 • Solar converter Features Q3 Q1
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APTCV40H60CT1G
APTCV50H60CT1G
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Untitled
Abstract: No abstract text available
Text: APTCV50H60T3G Trench & Field Stop IGBT Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full - Bridge NPT & Trench + Field Stop® IGBT Power module 13 CoolMOS Q2, Q4: VCES = 600V ; IC = 49A @ Tc = 25°C 14 Application Q1 Q3 CR1 • Solar converter CR3 18 11
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APTCV50H60T3G
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Untitled
Abstract: No abstract text available
Text: APTCV50H60T3G Full - Bridge NPT & Trench + Field Stop IGBT3 Power module 13 14 Q3 • Solar converter CR3 18 11 19 10 22 7 23 8 Q2 Q4 26 4 27 3 29 31 30 CoolMOS Q2, Q4: VCES = 600V ; IC = 49A @ Tc = 25°C Application Q1 CR1 Trench & Field Stop IGBT3 Q1, Q3:
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APTCV50H60T3G
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18w transistor
Abstract: No abstract text available
Text: T2G6001528-Q3 18W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features
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T2G6001528-Q3
T2G6001528-Q3
TQGaN25
18w transistor
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Untitled
Abstract: No abstract text available
Text: T2G6001528-Q3 18W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features
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T2G6001528-Q3
T2G6001528-Q3
TQGaN25
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Untitled
Abstract: No abstract text available
Text: T2G6000528-Q3 10W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •
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T2G6000528-Q3
T2G6000528-Q3
TQGaN25
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CRCW0805100F100
Abstract: Ghz dB transistor
Text: T2G6000528-Q3 10W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •
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T2G6000528-Q3
T2G6000528-Q3
CRCW0805100F100
Ghz dB transistor
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Untitled
Abstract: No abstract text available
Text: T2G6001528-Q3 18W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features
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T2G6001528-Q3
T2G6001528-Q3
TQGaN25
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transistor w 431
Abstract: transistor 431 smd TIC 122 Transistor transistor SE 431 w 431 transistor transistor je 123 6 pin TRANSISTOR SMD CODE tm transistor+431+smd
Text: T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Applications • • • • • • • General Purpose RF Power Jammers Military and Civilian Radar Professional and Military radio systems Wideband amplifiers Test instrumentation Avionics Product Features
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T1G6001528-Q3
T1G6001528-Q3
transistor w 431
transistor 431 smd
TIC 122 Transistor
transistor SE 431
w 431 transistor
transistor je 123
6 pin TRANSISTOR SMD CODE tm
transistor+431+smd
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1812C105KAT2A
Abstract: No abstract text available
Text: T1G6000528-Q3 7W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • Wideband and narrowband defense and commercial communication systems – General Purpose RF Power – Jammers – Radar – Professional radio systems – WiMAX – Wideband ampliiers
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T1G6000528-Q3
T1G6000528-Q3
1812C105KAT2A
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UPA101G
Abstract: UPA101G-E1
Text: UPA101G TRANSISTOR ARRAY FEATURES CONNECTION DIAGRAM Top View • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: (9 GHz Single Transistors) • OUTSTANDING hFE LINEARITY • SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE UPA101G 8 6 7 Q2 Q1 Q3 Q5 1
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UPA101G
UPA10
UPA101G-E1
2500/REEL
24-Hour
UPA101G
UPA101G-E1
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transistor SMD p90
Abstract: transistor 431 smd T1G6001528-Q3 smd transistor 901 100A150JW500XC EAR99 RO3203 S2834 431 TRANSISTOR smd
Text: T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Applications • • • • • • • General Purpose RF Power Jammers Military and Civilian Radar Professional and Military radio systems Wideband amplifiers Test instrumentation Avionics Product Features
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T1G6001528-Q3
T1G6001528-Q3
transistor SMD p90
transistor 431 smd
smd transistor 901
100A150JW500XC
EAR99
RO3203
S2834
431 TRANSISTOR smd
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ADC Key 1 603 rs232
Abstract: ISL26104 isl26102 ISL3152 ADS1232 use for weighing ads1232 weigh scale schematic PR40-Precision-SOI schematic diagram PWM solar charger solar usb charger schematic ECG sensor
Text: INTERSIL SELECTION GUIDE SIGNAL PATH Real Time Clocks Switches/Multiplexers Interface Digital Potentiometers Data Converters High Speed Op Amps Precision Op Amps Precision Instrumentation Amplifiers Precision Voltage References Power Management Q3/Q4 2012
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1-888-INTERSIL
D-85737
LC-096
ADC Key 1 603 rs232
ISL26104
isl26102
ISL3152
ADS1232 use for weighing
ads1232 weigh scale schematic
PR40-Precision-SOI
schematic diagram PWM solar charger
solar usb charger schematic
ECG sensor
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1812C105KAT2A
Abstract: C1206C104KRAC7800 600L270 7737 transistor CAPACITOR SPRAGUE 0149 Transistor s-parameter 600L270JT200 RO3210 RF Transistor s-parameter at 4GHz J1101
Text: T1G6000528-Q3 7W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • Wideband and narrowband defense and commercial communication systems –– General Purpose RF Power –– Jammers –– Radar –– Professional radio systems –– WiMAX –– Wideband amplifiers
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T1G6000528-Q3
T1G6000528-Q3
1812C105KAT2A
C1206C104KRAC7800
600L270
7737 transistor
CAPACITOR SPRAGUE 0149
Transistor s-parameter
600L270JT200
RO3210
RF Transistor s-parameter at 4GHz
J1101
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Untitled
Abstract: No abstract text available
Text: T1G6000528-Q3 7W, 28V, 20MHz-6GHz, GaN RF Power Transistor Applications • Wideband and narrowband defense and commercial communication systems –– General Purpose RF Power –– Jammers –– Radar –– Professional radio systems –– WiMAX –– Wideband amplifiers
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T1G6000528-Q3
20MHz-6GHz,
T1G6000528-Q3
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Untitled
Abstract: No abstract text available
Text: T1G6000528-Q3 7W, 28V, 20MHz-6GHz, GaN RF Power Transistor Applications • Wideband and narrowband defense and commercial communication systems –– General Purpose RF Power –– Jammers –– Radar –– Professional radio systems –– WiMAX –– Wideband amplifiers
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T1G6000528-Q3
20MHz-6GHz,
T1G6000528-Q3
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors ^ bbSB^Bl 0 Q3 1 7 flfl b37 M APX Preliminary specification PNP HDTV video transistor BFQ295 — FEATURES N AUER PHILIPS/DISCRETE b'lE D PINNING • High breakdown voltages PIN DESCRIPTION • Low output capacitance 1 emitter • High gain bandwidth product
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OCR Scan
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BFQ295
BFQ296.
BFQ295
OT128B
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