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Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Inductance 50 MHz Q-factor 50 MHz 50 DC Resistance IR RDC Self resonant frequency SRF Rated current Value Unit Tol. L 0.068 µH ±20% Q 10 mA max. 0.25
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Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Inductance 50 MHz Q-factor 50 MHz 50 DC Resistance IR RDC Self resonant frequency SRF Rated current Value Unit Tol. L 0.068 µH ±20% Q 10 mA max. 0.25
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Untitled
Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Inductance 50 MHz Q-factor 50 MHz 50 DC Resistance IR RDC Self resonant frequency SRF Rated current Value Unit Tol. L 0.047 µH ±20% Q 10 mA max. 0.25
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2012-ury
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Untitled
Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Inductance 50 MHz Q-factor 50 MHz 50 DC Resistance IR RDC Self resonant frequency SRF Rated current Value Unit Tol. L 0.047 µH ±20% Q 10 mA max. 0.25
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Untitled
Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Inductance 50 MHz Q-factor 50 MHz 50 DC Resistance IR RDC Self resonant frequency SRF Rated current Value Unit Tol. L 0.068 µH ±20% Q 10 mA max. 0.25
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Untitled
Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Inductance 50 MHz Q-factor 50 MHz 50 DC Resistance IR RDC Self resonant frequency SRF Rated current Value Unit Tol. L 0.047 µH ±20% Q 10 mA max. 0.25
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TB-163
Abstract: SQ201 10NF 470PF UT34-50
Text: T B - 1 6 3 S Q 2 0 1 G a i n /E f f i c i e n c y v s F r e q u e n c y ; V d s = 2 8 V d c I d q = . 4 A 16 100 90 80 12 70 60 Gain 8 50 Pout fixed at 4W 40 Efficiency 30 4 20 10 50 100 150 200 250 300 350 400 450 500 550 Freq in MHz TB-163 SQ201 Pout vs Pin Freq=250MHz Vds=28Vdc Idq=400ma
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TB-163
SQ201
250MHz
28Vdc
400ma
30MHz
10NF
470PF
UT34-50
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Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Inductance 50 MHz Q-factor 50 MHz 300 DC Resistance IR RDC Self resonant frequency SRF Rated current Value Unit Tol. L 0.047 µH ±20% Q 20 mA max. 0.2
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Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Inductance 50 MHz Q-factor 50 MHz 300 DC Resistance IR RDC Self resonant frequency SRF Rated current Value Unit Tol. L 0.047 µH ±20% Q 20 mA max. 0.15
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Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Inductance 50 MHz Q-factor 50 MHz 300 DC Resistance IR RDC Self resonant frequency SRF Rated current Value Unit Tol. L 0.047 µH ±20% Q 20 mA max. 0.15
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2012ury
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Untitled
Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Inductance 50 MHz Q-factor 50 MHz 300 DC Resistance IR RDC Self resonant frequency SRF Rated current Value Unit Tol. L 0.047 µH ±20% Q 20 mA max. 0.15
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Untitled
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Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Inductance 50 MHz Q-factor 50 MHz 300 DC Resistance IR RDC Self resonant frequency SRF Rated current Value Unit Tol. L 0.047 µH ±20% Q 20 mA max. 0.2
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Untitled
Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 250 MHz Q-factor 250 MHz L 6.8 nH ±5% Q 20 Q-factor 900 MHz min. Q 50 typ. DC Resistance Rated current @ 20°C RDC 0.083 Ω
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Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 250 MHz Q-factor 250 MHz L 8.7 nH ±5% Q 18 Q-factor 900 MHz min. Q 50 typ. DC Resistance Rated current @ 20°C RDC 0.200 Ω
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Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Inductance 50 MHz Q-factor 50 MHz DC Resistance @ 20°C Rated current ∆T = 20 K Self resonant frequency Value Unit Tol. L 150 nH ± 5% Q RDC 8 Ω max.
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Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Inductance 50 MHz Q-factor 50 MHz DC Resistance @ 20°C Rated current ∆T = 20 K Self resonant frequency Value Unit Tol. L 120 nH ± 5% Q RDC 8 Ω max.
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Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Inductance 50 MHz Q-factor 50 MHz DC Resistance @ 20°C Rated current ∆T = 20 K Self resonant frequency Value Unit Tol. L 180 nH ± 5% Q RDC 8 Ω max.
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Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Inductance 50 MHz Q-factor 50 MHz DC Resistance @ 20°C Rated current ∆T = 20 K Self resonant frequency Value Unit Tol. L 120 nH ± 5% Q RDC 8 Ω max.
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Untitled
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Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Inductance 50 MHz Q-factor 50 MHz DC Resistance @ 20°C Rated current ∆T = 20 K Self resonant frequency Value Unit Tol. L 150 nH ± 5% Q RDC 8 Ω max.
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Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Inductance 50 MHz Q-factor 50 MHz DC Resistance @ 20°C Rated current ∆T = 20 K Self resonant frequency Value Unit Tol. L 330 nH ± 5% Q RDC 8 Ω max.
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TB-453
Abstract: No abstract text available
Text: Evaluation Board For Pins C o n n e c t io n s and R e fe r to Data Circuit Sh eet of the INDEX DUT DUT TB—4 5 3 + 50 50 i THROUGH -Q ~ 50 9> 50 Q ?i iT 7 v v v u uO0 u%| <0 = S JŒ ZD- DUT =1*5 □ n-» nM nW JL 50 o Q - , A Notes: Sch em atic D ia g ra m
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R04350
TB-453
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0k2t
Abstract: No abstract text available
Text: Semiconductor General Description S im ultaneous LOW on C D and S D m akes both Q and Q Asynchronous Inputs: LOW input to S D Set sets Q to HIGH level LOW input to C D (Clear) sets Q to LOW level HIGH Features • lc c reduced by 50% Dual JK Positive Edge-Triggered
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54AC109
54ACT109
54ACT109
0k2t
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Untitled
Abstract: No abstract text available
Text: F -2 0 4 Q S H -0 2 0 -0 1 -F -D -D P -A Q S H -0 6 0 -0 1 -L -D —DP-A Q S H -040-01-L -D -D P -A ,50 mm SPECIFICATIONS For complete specifications see www.samtec.com?QSH-DP Insulator Material: Liquid Crystal Polymer. Contact Material: Phosphor Bronze Current Rating:
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-040-01-L
conn236
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Untitled
Abstract: No abstract text available
Text: MOSEL-VITELIC bSE D MOSEL- VITELIC • ^ 3 5 3 3 ^ 1 Q Q 0 5 Q 74 lit. ■ M O V I V53C8512JV53C9512 HIGH PERFORMANCE, LOW POWER 512K x 8 AND 512K x9B IT FAST PAGE MODE CMOS DYNAMIC RAM PRELIMINARY 50/50L 60/60L 70/70L Max. RAS Access Time, Irac 50 ns 60 ns
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V53C8512JV53C9512
50/50L
60/60L
70/70L
110ns
8512/V53C9512
8512L/V53C
9512L
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