Untitled
Abstract: No abstract text available
Text: July 1998 Revision 1.1 data sheet GOB256UV6431 A -(67/84/100/125)Q-S 2MByte (256K x 64) CMOS Synchronous Graphic Module General Description The GOB256UV6431(A)-(67/84/100/125)Q-S is a high performance, 2-megabtye synchronous, graphic RAM module organized as 256K words by 64 bits, in a 144-pin, small outline dual-in-line memory module (SODIMM) package.
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GOB256UV6431
144-pin,
MB81G83222-
256Kx32
GOB256UV6431
GOB256UV6431A:
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tsop 66
Abstract: No abstract text available
Text: July 1998 Revision 1.1 data sheet GOB512UV6431 A -(67/84/100/125)Q-S 4MByte (512K x 64) CMOS Synchronous Graphic Module General Description The GOB512UV6431(A)-(67/84/100/125)Q-S is a high performance, 4-megabtye synchronous, graphic RAM module organized as 512K words by 64 bits, in a 144-pin, small outline dual-in-line memory module (SODIMM) package.
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GOB512UV6431
144-pin,
MB81G83222-
256Kx32
GOB512UV6431
GOB512UV6431A
tsop 66
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ET1011N1
Abstract: et1011 et3028-50 et1310 10/100 ethernet transceiver GMII layout 1000BASE et1011r Agere SNR ET1011R1
Text: Preliminary Data Sheet August 2005 TruePHY ET1011 Gigabit Ethernet Transceiver Features Q Q Q Q 10Base-T, 100Base-TX, and 1000Base-T gigabit Ethernet transceiver: — 0.13 µm process — 128-pin TQFP and 84-pin MLCC: R RGMII, GMII, MII, RTBI, and TBI interfaces to
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ET1011
10Base-T,
100Base-TX,
1000Base-T
128-pin
84-pin
68-pin
downs106
DS05-181GPHY
ET1011N1
et1011
et3028-50
et1310
10/100 ethernet transceiver
GMII layout
1000BASE
et1011r
Agere SNR
ET1011R1
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100 pin wqfn
Abstract: Q841
Text: Packing Name NEC Tray LA-057 84 pin WQFN A K B L Q 84 1 D C P U H G Y F S T I M R E J X84KW-50A1-1 NOTE Each lead centerline is located within 0.12 mm 0.005 inch of its true position (T.P.) at maximum material condition. NEC CODE X84KW-50A1-1 EIAJ CODE Weight (Reference Value)
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LA-057
X84KW-50A1-1
100 pin wqfn
Q841
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MACH130
Abstract: MACH230 PAL22V10 mach131
Text: FINAL COM’L: -12/15/20, Q-20/25 MACH435-12/15/20, Q-20/25 Lattice Semiconductor High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 84 Pins in PLCC ■ Flexible clocking ■ 128 Macrocells — Four global clock pins with selectable edges
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Q-20/25
MACH435-12/15/20,
PAL33V16"
MACH130,
MACH131,
MACH230,
MACH231
17469E-26
17469E-27
MACH130
MACH230
PAL22V10
mach131
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MACH435
Abstract: mach230 MACH130 PAL22V10 mach 1 family amd AMD MACH435
Text: FINAL COM’L: -12/15/20, Q-20/25 Advanced Micro Devices MACH435-12/15/20, Q-20/25 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 84 Pins in PLCC ■ Flexible clocking ■ 128 Macrocells — Four global clock pins with selectable edges
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Q-20/25
MACH435-12/15/20,
PAL33V16"
MACH130,
MACH131,
MACH230,
MACH231
MACH435
mach230
MACH130
PAL22V10
mach 1 family amd
AMD MACH435
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k 153 p
Abstract: NEC AMC NEC J 302
Text: Mounting Pad Packing Magazine Name MP950-01A LB-056 JEDEC Tray UNT-AMC-002 84 pin QFJ 1150 x 1150 mil A C F E G H U J 84 1 D B T I Q K M N M P84L-50A3-2 NOTE Each lead centerline is located within 0.12 mm (0.005 inch) of its true position (T.P.) at maximum material condition.
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MP950-01A
LB-056
UNT-AMC-002
P84L-50A3-2
SC-646*
k 153 p
NEC AMC
NEC J 302
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thermal fuse M10
Abstract: MACH130 MACH230 PAL22V10 Mach435
Text: FINAL COM’L: -12/15/20, Q-20/25 MACH435-12/15/20, Q-20/25 Lattice/Vantis High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 84 Pins in PLCC ■ Flexible clocking ■ 128 Macrocells — Four global clock pins with selectable edges — Asynchronous mode available for each
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Q-20/25
MACH435-12/15/20,
PAL33V16"
MACH130,
MACH131,
MACH230,
MACH231
MACH435
17469E-26
thermal fuse M10
MACH130
MACH230
PAL22V10
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Untitled
Abstract: No abstract text available
Text: - PROPRIETARY INFORMATION - 90º HYBRID SURFACE MOUNT MODEL: SMQ-C61 76 - 84 MHz optimized bandwidth FEATURES: ► Excellent Performance ► Small Size, Surface Mount ► Building Block For: - Power Amplifiers - Image Rejection Mixers - I & Q / SSB Modulators
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SMQ-C61
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Untitled
Abstract: No abstract text available
Text: cP IITSU July 1998 Revision 1.1 data sheet GOB512UV6431 A -(67/84/100/125)Q-S 4MByte (512Kx 64) CMOS Synchronous Graphic Module General Description The GOB512UV6431 (A)-(67/84/100/125)Q-S is a high performance, 4-megabtye synchronous, graphic RAM module organized
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GOB512UV6431
512Kx
GOB512UV6431
144-pin,
B81G83222-
256Kx32
GOB512UV6431A
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C5148
Abstract: C5V65 bzv 4v7 marking rzr -sot23 -led 5v6 regulator bzx84 marking 84 BZX84C 28Z4 84C36
Text: voltage regulator diodes diodes de régulation de tension Types V ZT m in m ax V rZT @ IZ T m ax THOMSON-CSF a Vz rZ K @ >ZK m ax (Q) lm A | 62) typ (m A I (% / °C ) >r @ V R m ax A) (V ) (m A I •ZM M ark in g BZX BZX BZX BZX BZX 84 84 84 84 84 C 3V3
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BZV53
C5148
C5V65
bzv 4v7
marking rzr -sot23 -led
5v6 regulator
bzx84
marking 84
BZX84C
28Z4
84C36
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Untitled
Abstract: No abstract text available
Text: FUJITSU May 1997 Revision 0.3 data sheet GOB256UV6431 A -(67/84/100/125)Q-S 2MByte (256K x 64) CMOS Synchronous Graphic Module General Description The G O B 256U V 6431(A)-(67/84/100/125)Q -S is a high performance, 2-m egabtye synchronous, graphic RAM m odule organized
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GOB256UV6431
144-pin,
256Kx32
GOB256UV6431
37Ln75b
00E32bÃ
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Untitled
Abstract: No abstract text available
Text: cP IITSU May 1997 Revision 0.3 data sh e e t GOB256UV6431 A -(67/84/100/125)Q-S 2MByte (256K x 64) CMOS Synchronous Graphic Module General Description The GOB256UV6431 (A)—(67/84-/100/12 5 )Q -S is a high performance, 2-m egabtye synchronous, graphic RAM module organized
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GOB256UV6431
GOB256UV6431
144-pin,
256Kx32
MP-SGRAMM-20514-6/97
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Untitled
Abstract: No abstract text available
Text: cP IITSU May 1997 Revision 0.3 data sh e e t G 0B512U V6431 A -(67/84/100/125)Q -S 4MByte (512Kx 64) CMOS Synchronous Graphic Module General Description The GOB512UV6431 (A)—(67/84-/100/12 5 )Q -S is a high performance, 4 -m egabtye synchronous, graphic RAM module organized
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0B512U
V6431
512Kx
GOB512UV6431
144-pin,
256Kx32
GOB512UV6431A
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS30VSJ-2 HIGH-SPEED SWITCHING USE FS30VSJ-2 OUTLINE DRAWING 1 q Dimensions in mm J w e •G 1 6 +i CD O w r q w e r 4V DRIVE V d s s . 100V rDS ON (MAX). 84Î2
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FS30VSJ-2
O-220S
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Untitled
Abstract: No abstract text available
Text: COM’L: -15/20, Q-25 MACH435-15/20, Q-25 High-Density EE CMOS Programmable Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 84 Pins in PLCC ■ Up to 20 product terms per function, with XOR ■ 128 Macrocells ■ Flexible clocking ■ l5nstpD
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MACH435-15/20,
PAL33V16â
MACH130,
MACH230
ACH435-15/20,
003Mb5b
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Untitled
Abstract: No abstract text available
Text: FINAL COM’L: -15/20, Q-25 MACH435-15/20, Q-25 High-Density EE CMOS Programmable Logic ZI Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 84 Pins in PLCC ■ Up to 20 product terms per function, with XOR ■ 128 Macrocells ■ Flexible clocking ■
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MACH435-15/20,
PAL33V16"
MACH130,
MACH230
25752b
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Untitled
Abstract: No abstract text available
Text: FINAL COM’L: -15/20, Q-25 a MACH435-15/20, Q-25 High-Density EE CMOS Programmable Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 84 Pins in PLCC ■ Up to 20 product terms per function, with XOR ■ 128 Macrocells ■ Flexible clocking ■ 15nstpo
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MACH435-15/20,
15nstpo
PAL33V16â
MACH130,
MACH230
25752b
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Untitled
Abstract: No abstract text available
Text: FINAL COM’L: -12/15/20, Q-20/25 MACH435-12/15/20, Q-20/25 Lattice/Vantis High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 84 Pins in PLCC ■ Flexible clocking ■ 128 Macrocells — Four global clock pins w ith selectable edges ■
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OCR Scan
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PDF
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Q-20/25
MACH435-12/15/20,
12nstpD
PAL33V16â
MACH130,
MACH131,
MACH230,
MACH231
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AMD MACH435
Abstract: No abstract text available
Text: CONDENSED COM’L: -12/15/20, Q-20/25 MACH435-12/15/20, Q-20/25 High-Density EE CMOS Programmable Logic Adv“¡*£¡ Devices DISTINCTIVE CHARACTERISTICS • 84 Pins in PLCC ■ Flexible clocking ■ 128 Macrocells — Four global clock pins with selectable edges
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OCR Scan
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PDF
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Q-20/25
MACH435-12/15/20,
PAL33V16"
MACH130,
MACH131,
MACH230,
MACH231
MACH435
AMD MACH435
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Q67041-S1417
Abstract: TRANSISTOR SMD 019 CODE PACKAGE SOT23 bss 133 smd js p 84 AG qd transistor SMD bss84p BSS 84 P
Text: BSS 84 P SIEMENS Preliminary data SIPMOS Power Transistor • P Channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated Type BSS 84 P -VDS _ID 60 V 0.17 A 8 Q. f f DS on Pin 1 Pin 2 Pin 3 G S D Package (5) VGS Ordering Code "V G S = 10 V SOT-23
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Q67041-S1417
OT-23
Q67041-S1417
TRANSISTOR SMD 019 CODE PACKAGE SOT23
bss 133
smd js p 84
AG qd transistor SMD
bss84p
BSS 84 P
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mach435
Abstract: No abstract text available
Text: FIN A L COM’L: -12/15/20, Q-20/25 Advanced Micro Devices MACH435-12/15/20, Q-20/25 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • Flexible clocking ■ 84 Pins in PLCC ■ 128 Macrocells ■ — Four global clock pins with selectable edges
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OCR Scan
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PDF
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Q-20/25
MACH435-12/15/20,
PAL33V16â
MACH130,
MACH131,
MACH230,
MACH231
mach435
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Untitled
Abstract: No abstract text available
Text: FINAL COM’L: -12/15/20, Q-20/25 a Advanced Micro Devices MACH435-12/15/20, Q-20/25 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 84 Pins in PLCC ■ Flexible clocking ■ 128 Macrocells — Four global clock pins w ith selectable edges
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OCR Scan
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PDF
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Q-20/25
MACH435-12/15/20,
12nstpD
PAL33V16â
MACH130,
MACH131,
MACH230,
MACH231
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Untitled
Abstract: No abstract text available
Text: FINAL COM’L: -12.Q-20 Advanced Micro Devices MACH435-12, Q-20 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 84 Pins in PLCC ■ Up to 20 product terms per function, with XOR ■ 128 Macrocells ■ Flexible clocking ■ 12nstpD — Four global clock pins with selectable edges
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OCR Scan
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PDF
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MACH435-12,
12nstpD
PAL33V16â
MACH130,
MACH230
25752b
84-Pin
16-038-S
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