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    Q 13003 Search Results

    Q 13003 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    10061913-003CLF Amphenol Communications Solutions PCI Express® GEN 3 Card Edge, Storage and Server Connector, Vertical, Surface Mount, x16, 164 Positions, 1.00mm (0.039in) Pitch Visit Amphenol Communications Solutions
    75188-130-03LF Amphenol Communications Solutions BergStik® 2.54mm, Board To Board Connector, Unshrouded Vertical header, Through Hole, Single Row, 3 Positions, 5.08mm (0.200in) Pitch. Visit Amphenol Communications Solutions
    10077213-003LF Amphenol Communications Solutions HCI® Connector System, Power Supply Connectors, 4DC+24S+4DC Right Angle Header. Visit Amphenol Communications Solutions
    10082378-13003TLF Amphenol Communications Solutions PCI Express® GEN 3 Card Edge, Storage and Server Connector, Vertical, Press-Fit, x16, 164 Positions, 1.00mm (0.039in) Pitch Visit Amphenol Communications Solutions
    PSAS5F3130031TR Amphenol Communications Solutions SAS PCIe,Storage connectors, PSAS 5.0, 68pin, Vertical, Receptacle, blade hold down Visit Amphenol Communications Solutions
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    Q 13003 Price and Stock

    JRH Electronics SSQ-130-03-T-S

    CONN RCPT 30POS 0.1 TIN PCB
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    DigiKey SSQ-130-03-T-S Bulk 1
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    Samtec Inc SSQ-130-03-T-S

    CONN RCPT 30POS 0.1 TIN PCB
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    Newark SSQ-130-03-T-S Bulk 1
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    Powell Electronics SSQ-130-03-T-S 121 1
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    Master Electronics SSQ-130-03-T-S
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    Sager SSQ-130-03-T-S 183 1
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    Samtec Inc SSQ-130-03-G-T

    CONN RCPT 90POS 0.1 GOLD PCB
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    Master Electronics SSQ-130-03-G-T
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    Sager SSQ-130-03-G-T 1
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    Samtec Inc SSQ-130-03-S-T

    CONN RCPT 90POS 0.1 GOLD PCB
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    Master Electronics SSQ-130-03-S-T
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    Sager SSQ-130-03-S-T 1
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    Samtec Inc SSQ-130-03-F-T

    CONN RCPT 90POS 0.1 GOLD PCB
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    Master Electronics SSQ-130-03-F-T
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    Sager SSQ-130-03-F-T 1
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    Q 13003 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor 13003d

    Abstract: 13003D 13003a 13003a TRANSISTOR 13003F 13003C transistor 13003F 13003c TRANSISTOR 13003E S W 13003a
    Text: ELECTRONIC 13003 HIGH VOLTAGE POWER TRANSISTOR FEATURES: High Voltage Capability High Speed Switching Wide SOA APPLICATIONS: Flourscent Lamp Electronic Ballast Electronic Transformer LIMMITING VALUES Tj=25℃ Unless OtherWise Stated Parameter Symbol Value


    Original
    Jul-09 13003F transistor 13003d 13003D 13003a 13003a TRANSISTOR 13003F 13003C transistor 13003F 13003c TRANSISTOR 13003E S W 13003a PDF

    HF 13003

    Abstract: 13003 electronic ballast 13003 13002 sw 13003 LB 13002 BR 13003 13003 circuit HF 13002 H 13003
    Text: TELEFUNKEN ELECTRONIC 17E D • a ^ Q O 't e DDORb'S? : ■ AL GG TE 13002 TE 13003 TIiLllFlliKiKIK] electronic Crtfuv»Technotec«5 T-33-II Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast features: • In multi diffusion technique


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    T-33-11 HF 13003 13003 electronic ballast 13003 13002 sw 13003 LB 13002 BR 13003 13003 circuit HF 13002 H 13003 PDF

    Untitled

    Abstract: No abstract text available
    Text: QSFCT273T, 2273T Q High Speed CMOS 8-Bit Register with Asynchronous Reset qs5474fct273t QS54/74FCT2273T FEATURES/BENEFITS • Pin and function compatible to the 74F273 74FCT273 and 74ABT273 • CMOS power levels: <7.5 mW static • Available in DIP, SOIC, QSOP, ZIP, HQSOP


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    QSFCT273T, 2273T qs5474fct273t QS54/74FCT2273T 74F273 74FCT273 74ABT273 MIL-STD-883 2273D PDF

    Untitled

    Abstract: No abstract text available
    Text: ÖUALITY SEMICONDUC TOR INC bSE J> QSFCT280T, B 74fc,bfl03 ÜGD1EG3 417 1280T High Speed CMOS 9-Bit Parity Generator/Checker q s 54/74 f c t 2 sot qs54/74fcti28ot FEATURES/BENEFITS • • • • • QSFCT280BT faster than FAST 6.3 ns delay, I x to Xe for QSFCT280BT


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    1280T bfl03 QSFCT280T, qs54/74fcti28ot QSFCT280BT QSFCT1280T QSFCT1280BT QSFCT280/AT/BT QSFCT1280/AT/BT PDF

    tea 9502

    Abstract: Electronic Arrays Inc T3FL 9502c inverter /Invertron Vti
    Text: V L S I TECHNOLOGY I NC 72 dË| T3flfl3M7 D D D 0 4 2 D 5 | p ^~~T-42-ll-09 % VGC SERIES ADVANCED 2-MICRON CMOS GATE ARRAY FAMILY Q FEATURES • 500,900,1200,1900,2400,3200, 4000,6000 and 8000 gates. • True 2-micion silicon gate CMOS technology • High performance—


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    T-42-ll-09 VGC0500) tea 9502 Electronic Arrays Inc T3FL 9502c inverter /Invertron Vti PDF

    vt20c98

    Abstract: No abstract text available
    Text: V L S I TECHNOLOGY INC IflE D • =1300347 Q G 0 3 1 Ô 3 7 ■ V L S I Technology in c . P R E L IM IN A R Y VT20C98 VT20C99 8 ,1 9 2 x 8 SRA M FEATURES DESCRIPTION • High speed a c c e ss and cycle times: 25, 30 and 35 ns T he V T 2 0 C 9 8 and V T 2 0 C 9 9 are


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    VT20C98 VT20C99 vt20c98 PDF

    palce22v10 programming guide

    Abstract: No abstract text available
    Text: COM’L MIL PAL22V10-10/15 AmPAL22V10/A PALCE22V1 OH-15/25/Q-25 Advanced Micro Devices 24-pln TTL/CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • As fast as 10 ns propagation delay and 71 MHz fMAX ■ Low-power EE CMOS versions ■ 10 m acroceils program m able as registered or


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    PAL22V10-10/15 AmPAL22V10/A PALCE22V1 OH-15/25/Q-25 24-pln 2350-024A PAL22V10 palce22v10 programming guide PDF

    palce22v10 programming guide

    Abstract: PAL22V10-12/BKA
    Text: ADV MICRO P L A / PLE/ ARRAYS EßE PAL22V10-10/15 AmPAL22V10/A PALCE22V1 OH-15/25/Q-25 0E575Eb OQETSSS 3 IAMDE ~\ T-46-I9-07 T—46—19—13 Advanced Micro Devices 24-pln TT L/CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • As fast as 10 ns propagation delay and 71 MHz


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    PAL22V10-10/15 AmPAL22V10/A PALCE22V1 OH-15/25/Q-25 0E575Eb T-46-I9-07 24-pln 2350-024A PAL22V10 palce22v10 programming guide PAL22V10-12/BKA PDF

    RAL22V10

    Abstract: PALCE22V100-25 pal22v10
    Text: COM’L MIL Cl PAL22V10-10/15 AmPAL22Vl 0/A PALCE22V10H-15/25/Q-25 Advanced Micro Devices 24-pln TTUCMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • As fast as 10 ns propagation delay and 71 MHz fM AX ■ Low-power EE CMOS versions ■ 10 m acrocells program m able as registered o r


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    PAL22V10-10/15 AmPAL22Vl PALCE22V10H-15/25/Q-25 24-pln 24-pin 28-pin PAL22V10 RAL22V10 PALCE22V100-25 pal22v10 PDF

    pal 007a

    Abstract: dr 13003 si 13003 PAL22V10 13003 111 x 13003 circuit al 13003 PAL 002a pal 010a PC 13003
    Text: ADV MICRO P L A / PLE/ ARRAYS EßE 0E575Eb OQETSSS 3 ~\ T -46-I9-07 PAL22V10-10/15 AmPAL22V10/A PALCE22V1 OH-15/25/Q-25 IAMDE Advanced Micro Devices T—46—19—13 24-pln TT L/CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • As fast as 10 ns propagation delay and 71 MHz


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    PAL22V10-10/15 AmPAL22V10/A PALCE22 V1OH-15/25/Q-25 24-pln 02575Eb T-46-T9-07 025752b T-46-19-13 PAL22V10 pal 007a dr 13003 si 13003 13003 111 x 13003 circuit al 13003 PAL 002a pal 010a PC 13003 PDF

    TFK diodes BYW 76

    Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
    Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35


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    SD 1083

    Abstract: No abstract text available
    Text: S D 1 87 l5 Q - * » 0 0 DWG-N0" .0 4 7 - .0 6 3 FILE CAD SB7 I3Q.DGN D IS C RE TE WIRE FLAT -L -L INCH 87 130-0200 2.50 .098 7.50 .295 87 130-0300 5.00 .197 10.00 .394 87 130-0400 7.50 .295 12.50 .492 87 130-0500 10.00 .394 15.00 .591 87 130-0600 12.50 .492


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    aramid

    Abstract: No abstract text available
    Text: *J RADIALI! T itle F 715 151 000 TECHNICAL DATA SHEET Fibre Optic Components STANDARD MULTIMODE PLUG fo r a coated f ib e r DIA 900 |^ni alone or with a t i g t h cable Dimensions : mm S e r ie s EC 6.4b MAXI X & -< firm fl Ü C\J ~o £ CONTENTS 12345- Plug housing+optical ferrule DIA 146 |um q M"1-EEimj


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    Untitled

    Abstract: No abstract text available
    Text: V L S I T E C H N O L O G Y INC 47E D T3flfl347 Q D a ñ ? 7 T T V L S I Tech no lo gy , in c . VTI T -V 2 -* // VSRAM 100 HIGH SPEED STATIC RAM LIBRARY FEATURES DESCRIPTION • RAM configuration up to 4K bits — word width 4 or 8 bits — word depth 128, 256 or


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    T3flfl347 VSRAM00 PDF

    Pnp transistor smd ba rn

    Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
    Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj


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    Q9001-1994i CMSH1-20ML Pnp transistor smd ba rn transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28 PDF

    13003 TRANSISTOR equivalent

    Abstract: transistor sw 13003 transistor Eb 13003 A JE 13003 transistor eb 13003 j e 13003 MOTOROLA transistor MJE13002MJE13003 S JE 13003 13002 and 13003 power transistor TR 13003 transistor
    Text: MOTOROLA O rder this docum ent by MJE13002/D SEMICONDUCTOR TECHNICAL DATA M JE 13002* M JE 13003* D esigner’s Data Sheet ‘ M otorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS


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    MJE13002/D O-225AA 13003 TRANSISTOR equivalent transistor sw 13003 transistor Eb 13003 A JE 13003 transistor eb 13003 j e 13003 MOTOROLA transistor MJE13002MJE13003 S JE 13003 13002 and 13003 power transistor TR 13003 transistor PDF

    VT20C

    Abstract: No abstract text available
    Text: V L S I TECHNOLOGY INC 1ÖE D =130034? DD03Q42 □ • T - M - 8 3 -6 8 VLSI T ech n o lo g y , in c . VT20C71 VT20C72 4,096 x 4 SEPARATE I/O SRAM FEATURES DESCRIPTION • High-speed access and cycle times: 25, 35 ns The VT20C71 and VT20C72 are high-speed static RAMs organized


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    DD03Q42 VT20C71 VT20C72 VT20C71 VT20C72 A0-A11) VT2QC72) VT20C71) VT20C PDF

    Untitled

    Abstract: No abstract text available
    Text: TECHNOLOGY INC Tfi *1300347 0 0 0 1 7 3 ^ 7 ^ VLSI T e c h n o l o g y , in c . PRELIMINARY rT : V6:35 VT2KF9 2,064X9 FIFO MEMORY FE A T U R E S DESCRIPTION • FlraMn, flret-out dual-port memory The VT2KF9 Is a flrst-ln, flrst-out FIFO memory that uses a h igh *


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    064X9 PDF

    E 13003 TRANSISTOR

    Abstract: c s 13003 TRANSISTOR W 13003 TRANSISTOR 13002 TRANSISTOR transistor 13002 LM 13003 T 08 13003 transistor transistor LB 13003 C electronic ballast by transistor 13003 13003 TRANSISTOR
    Text: TELEFUNKEN ELECTRONIC 17E D • a^QO'te DDORb'S? : ■ AL GG TE 13002 TE 13003 TIiLllFlliKiKIK] electronic Crtfuv»Technotec«5 T-33-II Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast features: • In multi diffusion technique


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    T-33-II 0IN41 I3-75. 15A3DIN E 13003 TRANSISTOR c s 13003 TRANSISTOR W 13003 TRANSISTOR 13002 TRANSISTOR transistor 13002 LM 13003 T 08 13003 transistor transistor LB 13003 C electronic ballast by transistor 13003 13003 TRANSISTOR PDF

    SD13003

    Abstract: No abstract text available
    Text: EN G IN EER IN G NO. 130039 "sj 00 9 10 M A T E R IA L NO. D ESC RIPTIO N 1300390385 DND150 F E M A L E S T A N D A R D T E R M IN A T O R WITH R E S IS T O R 1 300390386 DND151 F E M A L E T E R M IN A T O R WITH JU M PE RS NO TES: 1. M A T E R IA L : S E E T A B L E


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    DND150 DND151 SD-130039-012 SD13003 PDF

    me 13003

    Abstract: ar 13003 HN62412P TU F 13003
    Text: H I T A C H I / L O G I C / A R R A Y S / M E M DM DËJ 0013003 0 04E 13003 4496203 HITACHI/ L OG IC / A R R A Y S/ M E M HN62412P- -P V Ó -/ J -/ 3 " 131072-word x 16-bit/262144-word x 8-bit CM O S Mask Programmable Read Only Memory The HN62412P is a 2-Mbit CMOS mask-programmable ROM


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    HN6241 HN62412P HN62412P, 200ns 100mW D15/A-1 me 13003 ar 13003 TU F 13003 PDF

    PT6045

    Abstract: VSC370 PT6005
    Text: V L S I TECHNOLOGY INC 4 7E D • =1300347 V L S I Tech n o lo gy , in c . 0000070 7 ■ VTI 'T - v z - m VSC370 SERIES 1-MICRON HIGH-DENSITY STANDARD CELL LIBRARY FEATURES • Advanced 0.85-micron channel length, 1.0-micron gate length silicon gate CMOS technology


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    VSC370 85-micron 000fiö T-42-41 PT6045 PT6005 PDF

    Untitled

    Abstract: No abstract text available
    Text: F NÜM^ÊîR D IM E N SIO N S I fi M l YY\ N O TES /f\ -D o n OT S G A L E P R IN T £ ï<=3nn<3Jja. C 130030-34’ <£ c te d i/ >' H \J0IR i . </ iS rZ - 1^] I J I J R EV J ERDO -0065-04 09/04 GR U & 2,3 o^ê 2>9o4J 4384 00 61 -£-L — CQJ •:;' -.W. :/


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    VT20C68-20

    Abstract: VT20C68-35 VT20C68 J 6920 A VT20C
    Text: V L S I 1ÔE 1> TECHNO LOG Y INC V L S I Te c h n o l o g y • =1300347 □DG3D37 7 ■ T-Hb-Z3 - / 2. in c . VT20C68 VT20C69 4,096 x 4 SRAM FEATURES DESCRIPTION • High-speed access and cycle times: 2 0 ,2 5 , and 35 ns The VT20C68 and VT20C69 are high-speed static RAMs SRAMs


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    DG3D37 VT20C68 VT20C69 VT20C68 VT20C69 VT20C69) VT20C68) AQ-A11) VT20C68-20 VT20C68-35 J 6920 A VT20C PDF