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    MG25Q2YS40

    Abstract: igbt 25A toshiba diode bridge toshiba Toshiba bridge diode TOSHIBA IGBT toshiba power module
    Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG25Q2YS40 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input impedance • High speed: • • • • tf = 0.5µs Max. trr = 0.5µs (Max.)


    Original     		MG25Q2YS40 PW03790796 MG25Q2YS40 igbt 25A toshiba diode bridge toshiba Toshiba bridge diode TOSHIBA IGBT toshiba power module PDF