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    PUSH PULL CLASS AB RF LINEAR Search Results

    PUSH PULL CLASS AB RF LINEAR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCTH011AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation

    PUSH PULL CLASS AB RF LINEAR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4CW100,000D

    Abstract: 4CW100000D operation of class c amplifier 000D microwave tubes
    Text: The 4CW100,000D is recommended for use as a Class C RF amplifier or oscillator, a Class AB RF linear amplifier, or a Class AB push-pull AF amplifier or modulator. The 4CW100,000D is also useful as a plate and screen modulated Class RF amplifier, and in pulse modulator-regulator service.


    Original     		PDF 4CW100 4CW50 4CW100,000D 4CW100000D operation of class c amplifier 000D microwave tubes

    4CW100,000E

    Abstract: SK-2011a operation of class c amplifier
    Text: The 4CW100,000E is ideal for use as a Class C RF amplifier or oscillator, a Class AB RF linear amplifier, or a Class AB push-pull AF amplifier or modulator as well as a plate and screen-modulated Class C RF amplifier. In a pulse modulator service, it can deliver a peak output of 4 megawatts. The tube is


    Original     		PDF 4CW100 4CW50 4CW100,000E SK-2011a operation of class c amplifier

    4CV100,000E

    Abstract: RF Amplifier operation of class c amplifier high power 500 watts audio amplifier 4CV100 710b SK-2011a "RF Amplifier" 500 watts audio amplifier
    Text: The 4CV100,000E is recommended for use as a Class C RF amplifier, a class AB RF amplifier, a Class AB push-pull audio amplifier or modulator, as well as a high level modulated or pulse duration modulated amplifier. The tube is characterized by low input and feedback capacitances and


    Original     		PDF 4CV100 4CW50 4CV100,000E RF Amplifier operation of class c amplifier high power 500 watts audio amplifier 710b SK-2011a "RF Amplifier" 500 watts audio amplifier

    power transistor audio amplifier 500 watts

    Abstract: 4CV100000 Eimac amplifier 200 watt audio amplifier 4CV100 710b high power 500 watts audio amplifier push pull class AB RF linear RF push pull power amplifier
    Text: Eimac Power Grid Tube - Quick Reference Data Sheet Page 1 of 1 4CV100,000E The Eimac 4CV100,000E is recommended for use as a Class C RF amplifier, a class AB RF amplifier, a Class AB push-pull audio amplifier or modulator, as well as a high level modulated or pulse duration modulated amplifier.


    Original     		PDF 4CV100 ttings\carolyn\Desktop\Objects\4cv100000e power transistor audio amplifier 500 watts 4CV100000 Eimac amplifier 200 watt audio amplifier 710b high power 500 watts audio amplifier push pull class AB RF linear RF push pull power amplifier

    8351

    Abstract: 4CV100,000C 4CV100000 "RF Amplifier" RF Amplifier 500 watts rf power amplifier 4CV100 af amplifier 4CV1
    Text: The 4CV100,00C/8351 is recommended for use as a Class C RF amplifier or oscillator, a Class AB, push-pull AF amplifier or modulator. The 4CV100,000/8351 is also useful as a plate and screen modulated Class C RF amplifier. Class of Operation Characteristics


    Original     		PDF 4CV100 00C/8351 00AB1 4CW50 000C/8351 8351 4CV100,000C 4CV100000 "RF Amplifier" RF Amplifier 500 watts rf power amplifier af amplifier 4CV1

    4CV250

    Abstract: class A push pull power amplifier 4CV250000 push pull class AB RF linear LB 124 transistor operation of class c amplifier 4600 c
    Text: Eimac Power Grid Tube - Quick Reference Data Sheet Page 1 of 1 4CV250,000B The Eimac 4CV250,000B is recommended for use as a Class C RF amplifier or oscillator, a Class AB linear amplifier, or a Class AB push-pull AF amplifier or modulator. The 4CV250,000B is also useful as a


    Original     		PDF 4CV250 ttings\carolyn\Desktop\Objects\4cv250000b class A push pull power amplifier 4CV250000 push pull class AB RF linear LB 124 transistor operation of class c amplifier 4600 c

    SD1489

    Abstract: airtronic ATC 100A
    Text: SD1489 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . . 470 - 860 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION


    Original     		PDF SD1489 SD1489 airtronic ATC 100A

    push pull class AB RF linear

    Abstract: ATC 100A SD1489
    Text: SD1489 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . . 470 - 860 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION


    Original     		PDF SD1489 SD1489 push pull class AB RF linear ATC 100A

    Arco 403

    Abstract: SD1476
    Text: SD1476 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . . 55 - 88 MHz 32 VOLTS COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING CLASS AB PUSH PULL HIGH SATURATED POWER CAPABILITY DIFFUSED EMITTER BALLAST RESISTORS DESIGNED FOR HIGH POWER LINEAR


    Original     		PDF SD1476 SD1476 Arco 403

    SD1456

    Abstract: TCC3100 push pull class AB RF linear
    Text: SD1456 TCC3100 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . 170 - 230 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION


    Original     		PDF SD1456 TCC3100) TCC3100 SD1456 TCC3100 push pull class AB RF linear

    SD1456

    Abstract: push pull class AB RF linear TCC3100
    Text: SD1456 TCC3100 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . 170 - 230 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION


    Original     		PDF SD1456 TCC3100) TCC3100 SD1456 push pull class AB RF linear TCC3100

    SD1476

    Abstract: 1uF 63V LCC7950 resistor 1W
    Text: SD1476 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . . 55 - 88 MHz 32 VOLTS COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING CLASS AB PUSH PULL HIGH SATURATED POWER CAPABILITY DIFFUSED EMITTER BALLAST RESISTORS DESIGNED FOR HIGH POWER LINEAR


    Original     		PDF SD1476 SD1476 1uF 63V LCC7950 resistor 1W

    DIODE aay 49

    Abstract: 100MF 63V GE DIODE diode l19 AAY49 M175 SD1660 si diode
    Text: SD1660 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS . . . . . . 860 - 900 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION FOR HIGH RELIABILITY DIFFUSED EMITTER BALLAST


    Original     		PDF SD1660 SD1660 DIODE aay 49 100MF 63V GE DIODE diode l19 AAY49 M175 si diode

    SD1680

    Abstract: DIODE aay 49 Electronic ballast 100W push pull class AB RF linear SD168 M175 GE DIODE
    Text: SD1680 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS . . . . . . 915 - 960 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION FOR HIGH RELIABILITY DIFFUSED EMITTER BALLAST


    Original     		PDF SD1680 SD1680 DIODE aay 49 Electronic ballast 100W push pull class AB RF linear SD168 M175 GE DIODE

    SD1680

    Abstract: M175 push pull class AB RF linear DIODE aay 49 j 4005
    Text: SD1680 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS . . . . . . 915 - 960 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION FOR HIGH RELIABILITY DIFFUSED EMITTER BALLAST


    Original     		PDF SD1680 SD1680 M175 push pull class AB RF linear DIODE aay 49 j 4005

    4CW150,000E

    Abstract: 4CW150 SK-2011a
    Text: The 4CW150,000E is intended for use as a Class C RF amplifier or oscillator, a Class AB push-pull AF amplifier or modulator as well as a plate and screen-modulated Class C RF amplifier. In pulse modulator service, it can deliver a peak output of 4 megawatts. The tube is characterized by low input


    Original     		PDF 4CW150 4CW50 4CW150,000E SK-2011a

    sd4100

    Abstract: No abstract text available
    Text: SD4100 RF POWER TRANSISTORS UHF TV/LINEAR APPLICATIONS • 470 - 860 MHz • 28 VOLTS • CLASS AB PUSH PULL • DESIGNED FOR HIGH POWER LINEAR OPERATION • HIGH SATURATED POWER CAPABILITY • INTERNAL INPUT/OUTPUT MATCHING NETWORKS PROVIDE HIGH BALANCED


    Original     		PDF SD4100 SD4100

    sd1456

    Abstract: TCC3100 push pull class AB RF linear
    Text: SD1456 TCC3100 RF POWER BIPOLAR TRANSISTORS TV/LINEAR APPLICATIONS FEATURES SUMMARY • 170 - 230 MHz Figure 1. Package ■ 28 VOLTS ■ CLASS AB PUSH PULL ■ DESIGNED FOR HIGH POWER LINEAR OPERATION ■ HIGH SATURATED POWER CAPABILITY ■ GOLD METALLIZATION


    Original     		PDF SD1456 TCC3100) SD1456 TCC3100 push pull class AB RF linear

    sd4100

    Abstract: push pull class AB RF linear L band
    Text: SD4100 RF POWER TRANSISTORS UHF TV/LINEAR APPLICATIONS • 470 - 860 MHz • 28 VOLTS • CLASS AB PUSH PULL • DESIGNED FOR HIGH POWER LINEAR OPERATION • HIGH SATURATED POWER CAPABILITY • INTERNAL INPUT/OUTPUT MATCHING NETWORKS PROVIDE HIGH BALANCED


    Original     		PDF SD4100 SD4100 push pull class AB RF linear L band

    SD4100

    Abstract: push pull class AB RF linear L band
    Text: SD4100 RF POWER TRANSISTORS UHF TV/LINEAR APPLICATIONS • 470 - 860 MHz • 28 VOLTS • CLASS AB PUSH PULL • DESIGNED FOR HIGH POWER LINEAR OPERATION • HIGH SATURATED POWER CAPABILITY • INTERNAL INPUT/OUTPUT MATCHING NETWORKS PROVIDE HIGH BALANCED


    Original     		PDF SD4100 SD4100 push pull class AB RF linear L band

    TCC3100

    Abstract: SD1456
    Text: SD1456 TCC3100 RF POWER BIPOLAR TRANSISTORS TV/LINEAR APPLICATIONS FEATURES SUMMARY • 170 - 230 MHz Figure 1. Package ■ 28 VOLTS ■ CLASS AB PUSH PULL ■ DESIGNED FOR HIGH POWER LINEAR OPERATION ■ HIGH SATURATED POWER CAPABILITY ■ GOLD METALLIZATION


    Original     		PDF SD1456 TCC3100) SD1456 TCC3100

    transistor C 639 W

    Abstract: BLV945B SOT324 35 W 960 MHz RF POWER TRANSISTOR NPN
    Text: • Philips Semiconductors IAPX bbSBqai DDSqgbl 5QT Preliminary specification BLV945B UHF push-pull power transistor N AilER PHILIPS/DISCRETE FEATURES • Double internal input matching for easy matching and high gain QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter class-AB push-pull test


    OCR Scan     		PDF BLV945B OT324 OT324 transistor C 639 W BLV945B SOT324 35 W 960 MHz RF POWER TRANSISTOR NPN

    L9110

    Abstract: DIODE aay 49
    Text: /T T SGS-THOMSON ^7# SD1492 RF & MICROWAVE TRANSISTO RS _ TV/LINEAR APPLICATIONS • . ■ . . ■ . ■ . 470 - 860 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS


    OCR Scan     		PDF SD1492 SD1492 L9110 DIODE aay 49

    Untitled

    Abstract: No abstract text available
    Text: • Philips Semiconductors bbSBTBl DQETEbl EOT H A P X Preliminary specification UHF push-pull power transistor — FEATURES • Double internal input matching for easy matching and high gain — M AMER PHILIPS/DISCRETE b'JE QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter class-AB push-pull test


    OCR Scan     		PDF BLV945B