AN602
Abstract: ca capacitor IRD2 GD Rectifiers 500C BYV255 VT25 diode gp SRD12 St gp 04s
Text: AN602 APPLICATION NOTE MODELLING PARALLEL OPERATION OF POWER RECTIFIERS WITH PSPICE INTRODUCTION The behavior of semiconductor components is always linked with the junction temperature. This is the case, for example, in current-sharing between diodes connected in parallel. The current in each
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AN602
AN602
ca capacitor
IRD2
GD Rectifiers
500C
BYV255
VT25
diode gp
SRD12
St gp 04s
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SRD12
Abstract: 500C BYV255
Text: APPLICATION NOTE MODELLING PARALLEL OPERATION OF POWER RECTIFIERS WITH PSPICE B. Rivet I - INTRODUCTION Fig.1 : Electrical and thermal models of a diode The behaviour of semiconductor components is always linked with the junction temperature. This is the case, for example, in current-sharing
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220S2
Abstract: 220 ohm resistor GA100 GA101 GA102
Text: GAI 00 GA 101 GA102 SCRs Nuclear Radiation Resistant, Planar FE A T U R E S D ESCR IP TIO N • Optimized for Radiation Resistance • Fully Characterized for “Worst Case” Design • Post Radiation Design Lim its Specified • Passivated Planar Construction for
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GA101
GA100
220S2
220 ohm resistor
GA102
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triacs bt 804 600v
Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
Text: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa tion for maintaining an unusually high level of quality, perfor
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Comp27-1296
triacs bt 804 600v
UR720
1N4465
AO110
diode 1N539
2N3750
Unitrode discrete databook
2N6138
CM104
unitrode 679 BRIDGE rectifier
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GA101
Abstract: to30A 220O GA100 GA102
Text: GAI 00 GA101 GA102 SCRs Nuclear Radiation Resistant, Planar FEATURES DESCRIPTION • Optimized for Radiation Resistance • Fully Characterized for “Worst Case” Design • Post Radiation Design Lim its Specified • Passivated Planar Construction for Maximum Reliability and Parameter
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GA101
GA102
to30A
GA100
to30A
220O
GA102
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st GK 12
Abstract: BY2202
Text: SCRs G A IO O Nuclear Radiation Resistant, Planar G A 1 0 2 FEATURES • Optimized for Radiation Resistance • Ful ly Characterized for “Worst Case" Design • Post Radiation Design Limits Specified • Passivated Planar Construction for Maximum Reliability and Parameter
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GA100
st GK 12
BY2202
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MB12-140
Abstract: dm445 1009C
Text: FUJI 1GBT S P E C I F I C A T I O N TYPE NAME : ¿MB12-140 1. Absolute maximum ratings Tc=25‘C Items Symbols maximum ratings Unit VcE 1400 V Gate-Eraitter Voltag e V ge V Continuos 1c 12 A Pulse-50/fS I CP 60 A Power Dissipation +1 C ollector Current
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MB12-140
Pulse-50/fS
DM445
MB12-140
1009C
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1mbh60-100
Abstract: Ir 900v 60a 000M4S3 QQD4451 MIM 205 S2371 MA 75816
Text: r 1. Absolute maximum ratings Tc=25*C I terns . Symbols Collector-Emitter Voltage Gate-Emitter Voltage Co11ec tor Curren t , Continuos Ratings Units Vces 1000 V Vg e s ±20 V 60 A 180 A Ic Pulse-50^s Ic pulse Max.Power Dissipation Pc 260 Operating Temperature
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Pulse-50
-t-15V.
1mbh60-100
Ir 900v 60a
000M4S3
QQD4451
MIM 205
S2371
MA 75816
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Untitled
Abstract: No abstract text available
Text: FUJI IGBT S P E C I F I C A T I O N TYPE NAME : 'JMB12-140 1. Absolute maximum r a t i n g s Tc=25*C Items Symbols maximum r a t i n g s Unit C o l l e c t o r - E m i t t e r Voltage VC E 1400 V Gate-Emi tt er Voltage Vge ± 20 V Continuos 1c 12 A Pulse-50/fS
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JMB12-140
Pulse-50/fS
000MMM4
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Untitled
Abstract: No abstract text available
Text: GAIOO GA101 GA102 SCRs Nuclear Radiation Resistant, Planar FEA TU R ES DESCRIPTION • Optimized for Radiation Resistance • Fully Characterized for “Worst Case" Design • Post Radiation Design Limits Specified • Passivated Planar Construction for Maximum Reliability and Parameter
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GA101
GA102
GA100
00300b
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IGBT 1MBH60-100
Abstract: 1mbh 1MBH60100 1MBH60-100 bhoo imbh60 FUJI IGBT
Text: Ratings and ch aracteristics of Fuji IGBT 1 M B H 6 1. Absolute maximum ratings 0 — 1 O O Tc=25*C I terns Symbols Ratings Units Col lector-Em itter Voltage Vces 1000 V Gate-Emitter Voltage Vces ±20 V 60 A 180 A 260 W + 150 *C Continuos Ic C ollector Current
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Pulse-50Â
Tji125Â
044SC)
IGBT 1MBH60-100
1mbh
1MBH60100
1MBH60-100
bhoo
imbh60
FUJI IGBT
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