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Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG204619 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
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NESG204619
NESG204619-A
NESG204619-T1-A
PU10465EJ01V0DS
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ultra low noise RF Transistor
Abstract: NEC JAPAN NESG204619 10T70
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG204619 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
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Original
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PDF
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NESG204619
NESG204619-T1
ultra low noise RF Transistor
NEC JAPAN
NESG204619
10T70
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