NE662M03
Abstract: k 2545 NE662M03-T1
Text: DATA SHEET NPN SILICON RF TRANSISTOR NE662M03 NPN SILICON RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Ideal for low noise ⋅ high-gain amplification and high-frequency oscillation NF = 1.2 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
|
Original
|
PDF
|
NE662M03
NE662M03-T1
PU10324EJ02V0DS
NE662M03
k 2545
NE662M03-T1
|
Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
PU10324EJ02V0DS
NE662M03
|