NESG2031M05
Abstract: NESG2031M05-T1
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05 FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
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PDF
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NESG2031M05
PU10189EJ02V0DS
NESG2031M05
NESG2031M05-T1
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transistor M05
Abstract: NESG2031M05-T1-A
Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG2031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05 FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
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Original
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PDF
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NESG2031M05
NESG2031M05-A
NESG2031M05-T1-A
PU10189EJ02V0DS
transistor M05
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