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    PTVA104501EH Search Results

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    PTVA104501EH Price and Stock

    MACOM PTVA104501EH-V1-R0

    RF MOSFET LDMOS 50V H-33288-2
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    DigiKey PTVA104501EH-V1-R0 Cut Tape 140 1
    • 1 $519.87
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    PTVA104501EH-V1-R0 Digi-Reel 1
    • 1 $519.87
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    PTVA104501EH-V1-R0 Reel 50
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    Mouser Electronics PTVA104501EH-V1-R0
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    Richardson RFPD PTVA104501EH-V1-R0 1
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    Infineon Technologies AG PTVA104501EHV1XWSA1

    RF MOSFET LDMOS H-33288-2
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    DigiKey PTVA104501EHV1XWSA1 Tray
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    MACOM PTVA104501EH-V1-R250

    RF MOSFET LDMOS
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    DigiKey PTVA104501EH-V1-R250 Reel 250
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    Mouser Electronics PTVA104501EH-V1-R250
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    Richardson RFPD PTVA104501EH-V1-R250 1
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    PTVA104501EH Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    PTVA104501EH-V1-R0 Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-33288-2 Original PDF
    PTVA104501EHV1R0XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-33288-2 Original PDF
    PTVA104501EH-V1-R250 Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF
    PTVA104501EHV1R250XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF
    PTVA104501EHV1XWSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF

    PTVA104501EH Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: PTVA104501EH advance specification Description advance specification Thermally-Enhanced High Power RF LDMOS FET 450 W, 50 V, 960 – 1215 MHz Advance Specification Data Sheets describe products that are being considered by Infineon for development and market introduction. The target performance


    Original     		PDF PTVA104501EH PTVA104501EH

    br cornell dubilier

    Abstract: No abstract text available
    Text: PTVA104501EH Thermally-Enhanced High Power RF LDMOS FET 450 W, 50 V, 960 – 1215 MHz Description The PTVA104501EH LDMOS FET is designed for use in power amplifier applications in the 960 to 1215 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down


    Original     		PDF PTVA104501EH PTVA104501EH H-33288-2 br cornell dubilier

    PTFB090901EA

    Abstract: No abstract text available
    Text: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB


    Original     		PDF PTVA093002TC 960MHz 758MHz) PXAC201602FC 2025MHz 2025MHz) H-49248H-4 H-37248-4 400MHz 2700MHz] PTFB090901EA

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF