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    PTFB212507SH Search Results

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    PTFB212507SH Price and Stock

    Infineon Technologies AG PTFB212507SHV1R250XTMA1

    RF MOSFET LDMOS
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    DigiKey PTFB212507SHV1R250XTMA1 Reel
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    Infineon Technologies AG PTFB212507SHV1R250X

    LDMOS FET, High Power RF, 200W, 28V, 2.11-2.17GHz, H-37288G-4/2 Pkg, T/R250 - Tape and Reel (Alt: PTFB212507SHV1R250)
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    Avnet Americas PTFB212507SHV1R250X Reel 250
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    MACOM PTFB212507SH V1 R250

    PTFB212507SH V1 R250
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical PTFB212507SH V1 R250 2,750 250
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    PTFB212507SH Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    PTFB212507SHV1R250XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF

    PTFB212507SH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor TL131

    Abstract: TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 PTFB212507SH LM78L05ACMND
    Text: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original     		PDF PTFB212507SH PTFB212507SH 200-watt H-34288G-4/2 transistor TL131 TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 LM78L05ACMND

    PTFB212507SH

    Abstract: No abstract text available
    Text: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original     		PDF PTFB212507SH PTFB212507SH 200-watt

    PTFB090901EA

    Abstract: No abstract text available
    Text: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB


    Original     		PDF PTVA093002TC 960MHz 758MHz) PXAC201602FC 2025MHz 2025MHz) H-49248H-4 H-37248-4 400MHz 2700MHz] PTFB090901EA

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF