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    PTFB192557SH Price and Stock

    Infineon Technologies AG PTFB192557SHV1XWSA1

    RF MOSFET LDMOS 28V H-34288-4
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    DigiKey PTFB192557SHV1XWSA1 Tray
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    Infineon Technologies AG PTFB192557SHV1R250XTMA1

    RF MOSFET LDMOS 28V H-34288-4
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    PTFB192557SH Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    PTFB192557SHV1R250XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS H-34288G-4/2 Original PDF
    PTFB192557SHV1XWSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS H-34288G-4/2 Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: PTFB192557SH Thermally-Enhanced High Power RF LDMOS FET 255 W, 28 V, 1930 – 1990 MHz Description The PTFB192557SH is a 250-watt LDMOS FET designed specifically for use in Doherty cellular power amplifier applications in the 1930 to 1990 MHz frequency band. Input and output matching has been


    Original     		PDF PTFB192557SH PTFB192557SH 250-watt

    PTFB090901EA

    Abstract: No abstract text available
    Text: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB


    Original     		PDF PTVA093002TC 960MHz 758MHz) PXAC201602FC 2025MHz 2025MHz) H-49248H-4 H-37248-4 400MHz 2700MHz] PTFB090901EA