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    PTFA260451E Price and Stock

    Infineon Technologies AG PTFA260451E-V1

    RF MOSFET LDMOS 28V H-30265-2
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    DigiKey PTFA260451E-V1 Tray
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    Infineon Technologies AG PTFA260451E V1

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    Bristol Electronics PTFA260451E V1 870
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    Quest Components PTFA260451E V1 696
    • 1 $68.1404
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    PTFA260451E Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PTFA260451E Infineon Technologies 2400 MHz to 2700 MHz; Package: PG: H-30265-2; Flange Type: Bolt Down; Matching: I/O; Frequency Band: 2,620.0 - 2,680.0 MHz; P1dB (typ): 45.0 W; Supply Voltage: 28.0 V; Original PDF
    PTFA260451E V1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 45W H-30265-2 Original PDF
    PTFA260451EV1 Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 45W H-30265-2 Original PDF

    PTFA260451E Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    PTFA260451E

    Abstract: No abstract text available
    Text: Preliminary PTFA260451E PTFA260451F Thermally Enhanced High Power RF LDMOS FETs 45 W, 2.62 – 2.68 GHz Description Features The PTFA260451E and PTFA260451F are thermally enhanced 45watt is internally matched GOLDMOS FETs intended for CDMA2000 applications from 2.62 to 2.68 GHz. Thermally enhanced packaging


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    PTFA260451E PTFA260451F 45watt CDMA2000 PDF

    k 2679

    Abstract: PTFA260451E BCP56 LM7805 INFINEON PHILIPS
    Text: PTFA260451E Thermally-Enhanced High Power RF LDMOS FET 45 W, 2.62 – 2.68 GHz Description The PTFA260451E is a thermally-enhanced 45-watt, internallymatched GOLDMOS FET intended for CDMA2000, Super3G 3GPP TSG RAN , and WiMAX applications from 2.62 to 2.68 GHz. Thermallyenhanced packaging provide the coolest operation available. Full


    Original
    PTFA260451E PTFA260451E 45-watt, CDMA2000, CDMA2000 k 2679 BCP56 LM7805 INFINEON PHILIPS PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFA260451E PTFA260451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2.62 – 2.68 GHz Description The PTFA260451E and PTFA260451F are thermally-enhanced 45-watt, internally matched GOLDMOS FETs intended for CDMA2000, Super3G 3GPP TSG RAN , and WiMAX applications


    Original
    PTFA260451E PTFA260451F 45-watt, CDMA2000, H-30265-2 PTFA260451F* H-31265-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFA260451E PTFA260451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2.62 – 2.68 GHz Description The PTFA260451E and PTFA260451F are thermally-enhanced 45-watt, internally matched GOLDMOS FETs intended for CDMA2000 applications from 2.62 to 2.68 GHz. Thermally-enhanced


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    PTFA260451E PTFA260451F 45-watt, CDMA2000 PTFA260451F* PDF

    PG-DSO-20

    Abstract: a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M
    Text: Never stop thinking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S state-of-the-art LDMOS technology, high-volume manufacturing facilities and fully-automated production assembly and test


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    PG-DSO-20 PG-RFP-10 H-34265-8 H-33265-8 H-30248-2 H-36248-2 H-33288-2 H-31248-2 H-37248-2 H-34288-2 PG-DSO-20 a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M PDF

    PTFB182503FL

    Abstract: PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503
    Text: Never stop th i nking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production


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    PTFA041501E PTFA041501F PG-DSO-20-63 PG-RFP-10 H-33265-8 H-34265-8 H-30260-2 H-36260-2 H-30265-2 H-30248-2 PTFB182503FL PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503 PDF