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    PTFA212401F Search Results

    PTFA212401F Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    PTFA212401F Infineon Technologies 2100 MHz to 2200 MHz; Package: PG:H-37260-2 ; Flange Type: Earless; Matching: I/O; Frequency Band: 2,110.0 - 2,170.0 MHz; P1dB (typ): 240.0 W; Supply Voltage: 30.0 V; Original PDF
    PTFA212401FV4 Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 240W H-37260-2 Original PDF
    PTFA212401F V4 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 240W H-37260-2 Original PDF
    PTFA212401FV4R250 Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 240W H-37260-2 Original PDF
    PTFA212401F V4 R250 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 240W H-37260-2 Original PDF

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    LM7805

    Abstract: BCP56 PTFA212401E PTFA212401F
    Text: PTFA212401E PTFA212401F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFA212401E and PTFA212401F are 240-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier


    Original     		PDF PTFA212401E PTFA212401F PTFA212401E PTFA212401F 240-watt H-36260-2 H-37260-2 LM7805 BCP56

    Untitled

    Abstract: No abstract text available
    Text: PTFA212401E PTFA212401F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFA212401E and PTFA212401F are 240-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier


    Original     		PDF PTFA212401E PTFA212401F PTFA212401F 240-watt H-36260-2 H-37260-2

    PG-DSO-20

    Abstract: a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M
    Text: Never stop thinking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S state-of-the-art LDMOS technology, high-volume manufacturing facilities and fully-automated production assembly and test


    Original     		PDF PG-DSO-20 PG-RFP-10 H-34265-8 H-33265-8 H-30248-2 H-36248-2 H-33288-2 H-31248-2 H-37248-2 H-34288-2 PG-DSO-20 a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M

    PTFB182503FL

    Abstract: PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503
    Text: Never stop th i nking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production


    Original     		PDF PTFA041501E PTFA041501F PG-DSO-20-63 PG-RFP-10 H-33265-8 H-34265-8 H-30260-2 H-36260-2 H-30265-2 H-30248-2 PTFB182503FL PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503