Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    PTFA210451E Search Results

    PTFA210451E Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    PTFA210451E Infineon Technologies 2100 MHz to 2200 MHz; Package: PG:H-30265-2; Flange Type: Bolt Down; Matching: I/O; Frequency Band: 2,010.0 - 2,170.0 MHz; P1dB (typ): 45.0 W; Supply Voltage: 28.0 V; Original PDF

    PTFA210451E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    200B

    Abstract: BCP56 LM7805 PTFA210451E infineon gold
    Text: PTFA210451E Thermally-Enhanced High Power RF LDMOS FET 45 W, 2110 – 2170 MHz Description The PTFA210451E is a thermally-enhanced, 45-watt, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from


    Original     		PDF PTFA210451E PTFA210451E 45-watt, 200B BCP56 LM7805 infineon gold

    LM7805

    Abstract: a2031
    Text: PTFA210451E PTFA210451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2110 – 2170 MHz Description The PTFA210451E and PTFA210451F are thermally-enhanced, 45-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier


    Original     		PDF PTFA210451E PTFA210451F 45-watt, PTFA210451F* LM7805 a2031