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    PTFA192001E V4 Price and Stock

    Infineon Technologies AG PTFA192001EV4XWSA1

    RF MOSFET LDMOS 30V H-36260-2
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    Infineon Technologies AG PTFA192001EV4R0XTMA1

    RF MOSFET LDMOS 30V H-36260-2
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    Infineon Technologies AG PTFA192001EV4R250XTMA1

    RF MOSFET LDMOS 30V H-36260-2
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    PTFA192001E V4 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    PTFA192001EV4 Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 200W H-36260-2 Original PDF
    PTFA192001EV4R0XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET LDMOS 30V H-36260-2 Original PDF
    PTFA192001EV4R250 Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 200W H-36260-2 Original PDF
    PTFA192001EV4R250XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF 65V 1.99GHZ H-36260-2 Original PDF
    PTFA192001EV4XWSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF 65V 1.99GHZ H-36260-2 Original PDF

    PTFA192001E V4 Datasheets Context Search

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    ptfa192001e

    Abstract: PTFA192001E V4 LM7805 PTFA192001F RO4350 PCS3475CT-ND
    Text: PTFA192001E PTFA192001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930 – 1990 MHz Description The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications


    Original     		PDF PTFA192001E PTFA192001F PTFA192001E PTFA192001F 200-watt H-36260-2 H-37260-2 PTFA192001E V4 LM7805 RO4350 PCS3475CT-ND

    Untitled

    Abstract: No abstract text available
    Text: PTFA192001E PTFA192001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930 – 1990 MHz Description The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications


    Original     		PDF PTFA192001E PTFA192001F PTFA192001E PTFA192001F 200-watt H-36260-2 H-37260-2

    Untitled

    Abstract: No abstract text available
    Text: PTFA192001E PTFA192001F Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930 – 1990 MHz Description The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching,


    Original     		PDF PTFA192001E PTFA192001F 200-watt H-36260-2 H-37260-2

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF