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    PTFA092213EL ESD Search Results

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    PTFA092213EL

    Abstract: LM7805 resistor 51k transistor c331 BCP56 R250 RO4350
    Text: PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power amplifier


    Original     		PDF PTFA092213EL PTFA092213FL PTFA092213EL PTFA092213FL 220-watt, LM7805 resistor 51k transistor c331 BCP56 R250 RO4350

    Untitled

    Abstract: No abstract text available
    Text: PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power ampliier


    Original     		PDF PTFA092213EL PTFA092213FL PTFA092213EL PTFA092213FL 220-watt, H-34288-4/2

    7909 regulator

    Abstract: PTFA092213ELV4
    Text: PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power amplifier


    Original     		PDF PTFA092213EL PTFA092213FL PTFA092213FL 220-watt, H-33288-6 H-34288-4/2 7909 regulator PTFA092213ELV4

    CW 7805

    Abstract: PTFA092213EL H-34288-6 PTFA092213EL ESD BCP56 LM7805 R250 RO4350 H-33288-6 240-2520-2-ND
    Text: PTFA092213EL PTFA092213FL Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power amplifier applications in the 920 to 960 MHz band. These devices feature


    Original     		PDF PTFA092213EL PTFA092213FL PTFA092213EL PTFA092213FL 220-watt, H-33288-6 H-34288-6 CW 7805 H-34288-6 PTFA092213EL ESD BCP56 LM7805 R250 RO4350 H-33288-6 240-2520-2-ND