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Catalog Datasheet	MFG & Type	PDF	Document Tags
PTF210301E Abstract: No abstract text available Text: PTF210301E PTF210301F High Power RF LDMOS Field Effect Transistor 30 W, 2110 – 2170 MHz Description The PTF210301E and PTF210301F are 30-watt, internally-matched GOLDMOS FETs intended for WCDMA applications from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation	Original	PDF	PTF210301E PTF210301F PTF210301E PTF210301F 30-watt, PTF210301F*

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PTF210301E

Abstract: No abstract text available
Text: PTF210301E PTF210301F High Power RF LDMOS Field Effect Transistor 30 W, 2110 – 2170 MHz Description The PTF210301E and PTF210301F are 30-watt, internally-matched GOLDMOS FETs intended for WCDMA applications from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation

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PTF210301E PTF210301F PTF210301E PTF210301F 30-watt, PTF210301F*