PTF210301A Search Results

PTF210301A Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
PTF210301A		Infineon Technologies	LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz		Original	PDF

PTF210301A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
PTF210301A Abstract: PTF210301E Text: PTF210301A High Power RF LDMOS Field Effect Transistor 30 W, 2110 – 2170 MHz PTF210301A Package 20265 Description The PTF210301A is a 30-watt, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.	Original	PDF	PTF210301A PTF210301A 30-watt, PTF210301E
PTF210301E Abstract: No abstract text available Text: PTF210301E PTF210301F High Power RF LDMOS Field Effect Transistor 30 W, 2110 – 2170 MHz Description The PTF210301E and PTF210301F are 30-watt, internally-matched GOLDMOS FETs intended for WCDMA applications from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation	Original	PDF	PTF210301E PTF210301F PTF210301E PTF210301F 30-watt, PTF210301F*
PTF210301E Abstract: marking us capacitor pf l1 PTF210301 PTF210301A DD 127 D TRANSISTOR Text: PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description Features The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.	Original	PDF	PTF210301 PTF210301 PTF210301E marking us capacitor pf l1 PTF210301A DD 127 D TRANSISTOR
Untitled Abstract: No abstract text available Text: PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description Features The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.	Original	PDF	PTF210301 PTF210301