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    PTF080451 Search Results

    PTF080451 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    PTF080451 Infineon Technologies LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz Original PDF
    PTF080451E Infineon Technologies LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz Original PDF

    PTF080451 Datasheets Context Search

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    LM7805 smd

    Abstract: LM7805 smd 8 pin marking us capacitor pf l1 smd marking f2 TRANSISTOR circuit of lm7805 transistor smd marking ND BCP56 LM7805 PTF080451 PTF080451E
    Text: PTF080451 LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz Description Features The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF080451 PTF080451 LM7805 smd LM7805 smd 8 pin marking us capacitor pf l1 smd marking f2 TRANSISTOR circuit of lm7805 transistor smd marking ND BCP56 LM7805 PTF080451E

    Untitled

    Abstract: No abstract text available
    Text: Developmental PTF 080451E High Power RF LDMOS FET 45 W, 860–960 MHz Description Features The PTF 080451E is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860–960 MHz bands. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF 080451E 080451E