PTB 20111 Search Results

PTB 20111 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
SER2011-152MLD		Coilcraft Inc	Power inductor, high current, 10% tol, SMT, RoHS
SER2011-152MLB		Coilcraft Inc	Power inductor, high current, 10% tol, SMT, RoHS
SER2011-152		Coilcraft Inc	Power inductor, high current, 10% tol, SMT, RoHS
SER2011-152ML		Coilcraft Inc	Power inductor, high current, 10% tol, SMT, RoHS
SER2011-102MLD		Coilcraft Inc	General Purpose Inductor, 1uH, 20%, 1 Element, Ferrite-Core, SMD, 7674, ROHS COMPLIANT

PTB 20111 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
PTB20111		Advanced Semiconductor	Transistor		Original	PDF
PTB 20111		Ericsson Components	BJT, NPN, RF Power Transistor, IC 20A		Original	PDF
PTB20111		Ericsson Components	85 Watts, 860-900 MHz Cellular Radio RF Power Transistor		Original	PDF

PTB 20111 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
PTB 20111 Abstract: No abstract text available Text: e PTB 20111 85 Watts, 860–900 MHz Cellular Radio RF Power Transistor Description The 20111 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 860 to 900 MHz. Rated at 85 watts minimum output power, it may be used for both CW and PEP	Original	PDF	1-877-GOLDMOS 1301-PTB PTB 20111
diode in58 Abstract: OMRON POWER RELAY MP2 DMT 98 ATEX G 001 honeywell dcs manual Yokogawa Transducer ABB inverter motor fault code pdt 908 Text: Interface Technology and Switching Devices 2013 / 2014 7 PCB connection technology and electronics housing • PCB terminal blocks and plug-in connectors • Electronics housing Connection technology for field devices • Plug-in connectors • Cables and connectors	Original	PDF	unitB-FLK50/0 VIP-CAB-FLK50/0 VIP-CAB-FLK50/FR/OE/0 diode in58 OMRON POWER RELAY MP2 DMT 98 ATEX G 001 honeywell dcs manual Yokogawa Transducer ABB inverter motor fault code pdt 908
CERBERUS ocds TC1797 Abstract: SSC 9101 TC1797 multican testmode stcon flash micro ALPHA 1077 APA Text: 32-Bit TC1797 32-Bit Single-Chip Microcontroller User’s Manual V1.1 2009-05 Microcontrollers Edition 2009-05 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or	Original	PDF	32-Bit TC1797 32-Bit CERBERUS ocds TC1797 SSC 9101 TC1797 multican testmode stcon flash micro ALPHA 1077 APA
Untitled Abstract: No abstract text available Text: ERICSSON ^ Contents PTB PTB PTB PTB PTB PTB PTB PTB PTB PTB PTB PTB PTB PTB PTB PTB PTB 20003. 7-53 20004. 7-23	OCR Scan	PDF
PTB 20111 Abstract: No abstract text available Text: ERICSSON ^ PTB 20111 85 Watts, 860 - 900 MHz Cellular Radio RF Power Transistor Description Key Features The 20111 is a class AB, NPN, common emitter RF Power Transistor intended for 25 VDC operation across the 860 -900 MHz frequency band. It is rated at 85 Watts minimum output	OCR Scan	PDF	200mA PTB20111 PTB 20111
20111 Abstract: No abstract text available Text: ERICSSON ^ PTB 20111 85 Watts, 860-900 MHz Cellular Radio RF Power Transistor Description The 20111 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 860 to 900 MHz. Rated at 85 watts minimum output power, it may be used for both CW and PEP	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: ERICSSON ^ PTB 20111 85 Watts, 860-900 MHz Cellular Radio RF Power Transistor Description T he 20111 is a c la ss AB, N PN , com m on emitter R F pow er transistor intended for 25 V d c operation from 860 to 900 M H z. Rated at 85 watts minimum output power, it m ay be used for both C W and P E P	OCR Scan	PDF