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    PT 1300 PHOTOTRANSISTOR Search Results

    PT 1300 PHOTOTRANSISTOR Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    XPN1300ANC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 30 A, 0.0133 Ω@10V, TSON Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    BLA1011-300 Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy

    PT 1300 PHOTOTRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Technical Data Sheet Opto Interrupter ITR20006 █ Features ․Fast response time ․High analytic ․High sensitivity ․Cut-off visible wavelength λP=940nm ․Pb free ․This product itself will remain within RoHS compliant version. █ Descriptions The ITR20006 consist of an infrared emitting diode and an NPN silicon phototransistor,


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    PDF ITR20006 940nm ITR20006 IR928-6C-F PT928-6C-F. NoDRX-0000015 date2009/4/13

    PT 1300 phototransistor

    Abstract: 50/PT 1300 phototransistor
    Text: Opto Interrupter ITR9608-F Features ․Fast response time ․High analytic ․Cut-off visible wavelength λp=940nm ․High sensitivity ․Pb free ․This product itself will remain within RoHS compliant version Description ․The ITR9608-F consist of an infrared emitting diode and an NPN silicon phototransistor,


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    PDF ITR9608-F 940nm ITR9608-F IR928-6C PT928-6C DRX-0000076 PT 1300 phototransistor 50/PT 1300 phototransistor

    ITR9909

    Abstract: PT 1300 phototransistor
    Text: Technical Data Sheet Opto Interrupter ITR9909 █ Features ․Fast response time ․High analytic ․Peak wavelength λp=940nm ․High sensitivity ․Pb free ․This product itself will remain within RoHS compliant version. █ Descriptions The ITR9909 consist of an infrared emitting diode and an NPN silicon phototransistor,


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    PDF ITR9909 940nm ITR9909 DRX-0000009 PT 1300 phototransistor

    ITR8010

    Abstract: No abstract text available
    Text: Technical Data Sheet Opto Interrupter ITR8010 █ Features ․Fast response time ․High analytic ․Cut-off visible wavelength λp=940nm ․High sensitivity ․Pb free ․This product itself will remain within RoHS compliant version █ Descriptions ․The ITR8010 consist of an infrared emitting diode and an NPN silicon phototransistor,


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    PDF ITR8010 940nm ITR8010 CDRX-810-010

    PT 1300 phototransistor

    Abstract: No abstract text available
    Text: Technical Data Sheet Opto Interrupter ITR8010 █ Features ․Fast response time ․High analytic ․Cut-off visible wavelength 1p=940nm ․High sensitivity ․Pb free ․This product itself will remain within RoHS compliant version █ Descriptions ․The ITR8010 consist of an infrared emitting diode and an NPN silicon phototransistor,


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    PDF ITR8010 940nm ITR8010 CDRX-810-010 PT 1300 phototransistor

    PT 1300 phototransistor

    Abstract: No abstract text available
    Text: Technical Data Sheet Opto Interrupter ITR9909 █ Features ․Fast response time ․High analytic ․Peak wavelength λp=940nm ․High sensitivity ․Pb free ․This product itself will remain within RoHS compliant version. █ Descriptions The ITR9909 consist of an infrared emitting diode and an NPN silicon phototransistor,


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    PDF ITR9909 940nm ITR9909 DRX-0000009 PT 1300 phototransistor

    ITR9702-F

    Abstract: IR928-6C-F PT928-6C-F
    Text: Technical Data Sheet Opto Interrupter ITR9702-F █ Features ․Fast response time ․High analytic ․Cut-off visible wavelength λp=940nm ․High sensitivity ․Pb free ․This product itself will remain within RoHS compliant version █ Descriptions ․The ITR9702-F consist of an infrared emitting diode and an NPN silicon phototransistor,


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    PDF ITR9702-F 940nm ITR9702-F IR928-6C-F PT928-6C-F NoDRX-0000010 date2007/6/4 PT928-6C-F

    Untitled

    Abstract: No abstract text available
    Text: Technical Data Sheet Opto Interrupter ITR9702-F Features Fast response time High analytic Cut-off visible wavelength p=940nm High sensitivity Pb free This product itself will remain within RoHS compliant version Descriptions The ITR9702-F consist of an infrared emitting diode and an NPN silicon phototransistor,


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    PDF ITR9702-F 940nm ITR9702-F IR928-6C-F PT928-6C-F DRX-0000010

    PT534-6B

    Abstract: 10secs-5mins
    Text: Technical Data Sheet 5mm Silicon Phototransistor T-1 3/4 PT534-6B Features ․Fast response time ․High photo sensitivity ․Pb free Descriptions ․PT534-6B is a high speed and high sensitive NPN silicon phototransistor molded in a standard φ5 mm package.


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    PDF PT534-6B PT534-6B CDPT-053-001 10secs-5mins

    Untitled

    Abstract: No abstract text available
    Text: Technical Data Sheet 5mm Phototransistor T-1 3/4 PT334-6C Features ․Fast response time ․High photo sensitivity ․Pb free ․The product itself will remain within RoHS compliant version. Descriptions ․PT334-6C is a high speed and high sensitive silicon


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    PDF PT334-6C PT334-6C DPT-033-059

    PT331C

    Abstract: No abstract text available
    Text: Technical Data Sheet 5mm Phototransistor T-1 3/4 PT331C Features ․Fast response time ․High photo sensitivity ․Pb free ․The product itself will remain within RoHS compliant version. Descriptions ․PT331C is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard 5Φ


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    PDF PT331C PT331C NoDPT-033-001 date07-20-2005

    PT204-6C

    Abstract: No abstract text available
    Text: Technical Data Sheet 3mm Phototransistor T-1 PT204-6C Features ․Fast response time ․High photo sensitivity ․Pb free ․The product itself will remain within RoHS compliant version. Descriptions ․PT204-6C is a high speed and high sensitive NPN silicon


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    PDF PT204-6C PT204-6C NoDPT-020-047 date07-20-2005

    PT334-6C

    Abstract: pt334
    Text: Technical Data Sheet 5mm Phototransistor T-1 3/4 PT334-6C Features ․Fast response time ․High photo sensitivity ․Pb free ․The product itself will remain within RoHS compliant version. Descriptions ․PT334-6C is a high speed and high sensitive silicon


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    PDF PT334-6C PT334-6C NoDPT-033-059 date07-20-2005 pt334

    Untitled

    Abstract: No abstract text available
    Text: Technical Data Sheet 5mm Silicon Phototransistor T-1 3/4 PT534-6B Features Fast response time High photo sensitivity Pb free Descriptions PT534-6B is a high speed and high sensitive NPN silicon phototransistor molded in a standard φ5 mm package. Due to its black epoxy the device is sensitive to visible and


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    PDF PT534-6B PT534-6B CDPT-053-001

    Untitled

    Abstract: No abstract text available
    Text: Technical Data Sheet 3mm Phototransistor T-1 PT202C Features ․Fast response time ․High photo sensitivity ․Pb free ․The product itself will remain within RoHS compliant version. Descriptions ․PT202C is a high speed and high sensitive NPN silicon phototransistor molded in a standard φ3 mm package.


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    PDF PT202C PT202C NoDPT-020-009 date07-20-2005

    PT331

    Abstract: pt331c
    Text: Technical Data Sheet 5mm Phototransistor T-1 3/4 PT331C Features ․Fast response time ․High photo sensitivity ․Pb free Descriptions ․PT331C is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard 5Φ package. Due to is water clear epoxy the device is sensitive


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    PDF PT331C PT331C NoDPT-033-001 date07-19-2004 PT331

    PT334-6C

    Abstract: PT334-6C-27
    Text: Technical Data Sheet 5mm Phototransistor T-1 3/4 PT334-6C-27 Features ˙Fast response time ˙High photo sensitivity Descriptions ˙PT334-6C-27 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard 5Φ package. Due to is water clear epoxy the device is sensitive


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    PDF PT334-6C-27 PT334-6C-27 NoDPT-033-136 date02-12-2003 PT334-6C

    RD 6B CIRCUIT

    Abstract: PT204-6B black 3mm npn phototransistor, T-1
    Text: Technical Data Sheet 3mm Phototransistor T-1 PT204-6B/C1 Features ˙Fast response time ˙High photo sensitivity Descriptions ˙PT204-6B/C1 is a high speed and high sensitive NPN silicon phototransistor molded in a standard φ3 mm package. Due to its black epoxy the device is sensitive to infrared radiation.


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    PDF PT204-6B/C1 PT204-6B/C1 NoDPT-020-138 date04-03-2003 RD 6B CIRCUIT PT204-6B black 3mm npn phototransistor, T-1

    3mm npn phototransistor, T-1

    Abstract: IC 2267 equivalent transistor 6c PT204-6C
    Text: Technical Data Sheet 3mm Phototransistor T-1 PT204-6C Features ․Fast response time ․High photo sensitivity ․Pb free Descriptions ․PT204-6C is a high speed and high sensitive NPN silicon phototransistor molded in a standard φ3 mm package. Due to is water clear epoxy the device is sensitive


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    PDF PT204-6C PT204-6C NoDPT-020-047 date07-20-2004 3mm npn phototransistor, T-1 IC 2267 equivalent transistor 6c

    Untitled

    Abstract: No abstract text available
    Text: Technical Data Sheet 3mm Phototransistor T-1 PT204-6C Features Fast response time High photo sensitivity Pb free The product itself will remain within RoHS compliant version. Descriptions PT204-6C is a high speed and high sensitive NPN silicon phototransistor molded in a standard φ3 mm package.


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    PDF PT204-6C PT204-6C DPT-020-047

    Untitled

    Abstract: No abstract text available
    Text: Technical Data Sheet 1.5mm Side Looking Phototransistor PT908-7B Features ․Fast response time ․High sensitivity ․Small junction capacitance ․Pb free Descriptions PT908-7Bis a phototransistor in miniature package which is molded in a water clear plastic with spherical top view lens.


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    PDF PT908-7B PT908-7Bis NoDPT-090-107 date11-18-2003

    Untitled

    Abstract: No abstract text available
    Text: Technical Data Sheet 5mm Phototransistor T-1 3/4 PT334-6C Features Fast response time High photo sensitivity Pb free The product itself will remain within RoHS compliant version. Descriptions PT334-6C is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard 5


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    PDF PT334-6C PT334-6C DPT-033-059

    Untitled

    Abstract: No abstract text available
    Text: Opto Interrupter ITR9606-F Features ․Fast response time ․High analytic ․Cut-off visible wavelength λp=940nm ․High sensitivity ․Pb free ․This product itself will remain within RoHS compliant version Description ․The ITR9606-F consist of an infrared emitting diode and an NPN silicon phototransistor,


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    PDF ITR9606-F 940nm ITR9606-F IR928-6C-F PT928-6C-F DRX-0000176

    Untitled

    Abstract: No abstract text available
    Text: bOE D 6 2 3 S b D 5 Q D 4 L 7 Ö S TGI « S I E G SIEMENS AKTIENGESELLSCHAF SIEMENS SFH501 SILICON DARLINGTON PHOTOTRANSISTOR FEATURES Maximum Ratings • Silicon Darlington Phototransistor in Epitaxial Planar Technology Operating and Storage Temperature . —55°C to +100CC


    OCR Scan
    PDF SFH501